One-dimensional electrical contact to a two-dimensional material

L. Wang, I. Meric, P. Y. Huang, Q. Gao, Y. Gao, H. Tran, T. Taniguchi, K. Watanabe, L. M. Campos, D. A. Muller, J. Guo, P. Kim, J. Hone, K. L. Shepard, C. R. Dean

Research output: Contribution to journalArticle

Abstract

Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.

Original languageEnglish (US)
Pages (from-to)614-617
Number of pages4
JournalScience
Volume342
Issue number6158
DOIs
StatePublished - 2013
Externally publishedYes

ASJC Scopus subject areas

  • General

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    Wang, L., Meric, I., Huang, P. Y., Gao, Q., Gao, Y., Tran, H., Taniguchi, T., Watanabe, K., Campos, L. M., Muller, D. A., Guo, J., Kim, P., Hone, J., Shepard, K. L., & Dean, C. R. (2013). One-dimensional electrical contact to a two-dimensional material. Science, 342(6158), 614-617. https://doi.org/10.1126/science.1244358