On the possibility of transistor action based on quantum interference phenomena

Fernando Sols, M. Macucci, U. Ravaioli, Karl Hess

Research output: Contribution to journalArticlepeer-review

Abstract

A theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented. Transmission and reflection coefficients are computed by use of a tight-binding Green function technique. As expected, the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that the penetration of the wave function of the electrons can be controlled by external voltages. We conclude that transistor action based on quantum interference should be observable in such structures, and we present general results for the functional dependences of the transmission coefficient which corresponds to a transconductance.

Original languageEnglish (US)
Pages (from-to)350-352
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number4
DOIs
StatePublished - 1989

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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