TY - JOUR
T1 - On the microstructure and interfacial structure of InSb layers grown on GaAs(100) by molecular beam epitaxy
AU - Kiely, C. J.
AU - Chyi, J. I.
AU - Rockett, A.
AU - Morkoç, H.
N1 - Funding Information:
The authors wish to thank S. J. Bailey, J. A. Eades, H. L. Fraser, K. C. Hsieh and E. A. Sammann for helpful discussions regarding this work, and A. E. Greene for his excellent maintenance of the EM430. Discussions and encouragement by K. Zanio and R. Bean of Ford Aerospace, Newport Beach, are also acknowledged. This work was supported by the U.S. Department of Energy under Contract DE-AC-02-76ER 01 198, the U.S. Air Force Office of Scientific Research under Contract 86-01 11, and IBM. The microscopy was carried out at the Center for Microanalysis of Materials, University of Illinois, which is supported by the U.S. Department of Energy.
PY - 1989/9
Y1 - 1989/9
N2 - InSb films grown directly on GaAs(100) substrates by molecular beam epitaxy have been examined by transmission electron microscopy (TEM). High-quality epitaxial InSb layers were deposited despite the 14.6% lattice mismatch between film and substrate. Almost all the misfit strain was accommodated by a square array of (a/2){01̄1} edge-type misfit dislocations, spaced on average 29 angstrom apart. A model for the formation of these dislocation arrays is presented. Pure edge-type dislocations are favoured over 60°-type dislocation arrays because they are more efficient at relieving misfit strain and consequently allow more coherent interface area to form. Several types of growth defect, namely Sb inclusions, microtwins and dislocation tangles, were observed in the InSb layers. Various methods for reducing the overall defect density are discussed. Finally, results on the extent of electron beam damage of InSb layers occurring during TEM observation are presented.
AB - InSb films grown directly on GaAs(100) substrates by molecular beam epitaxy have been examined by transmission electron microscopy (TEM). High-quality epitaxial InSb layers were deposited despite the 14.6% lattice mismatch between film and substrate. Almost all the misfit strain was accommodated by a square array of (a/2){01̄1} edge-type misfit dislocations, spaced on average 29 angstrom apart. A model for the formation of these dislocation arrays is presented. Pure edge-type dislocations are favoured over 60°-type dislocation arrays because they are more efficient at relieving misfit strain and consequently allow more coherent interface area to form. Several types of growth defect, namely Sb inclusions, microtwins and dislocation tangles, were observed in the InSb layers. Various methods for reducing the overall defect density are discussed. Finally, results on the extent of electron beam damage of InSb layers occurring during TEM observation are presented.
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U2 - 10.1080/01418618908213865
DO - 10.1080/01418618908213865
M3 - Article
AN - SCOPUS:0024739006
SN - 0141-8610
VL - 60
SP - 321
EP - 337
JO - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
JF - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
IS - 3
ER -