On the mechanism of ion-implanted As diffusion in relaxed SiGe

S. Eguchi; J. J. Lee; S. J. Rhee; D. L. Kwong; M. L. Lee; E. A. Fitzgerald; I. Åberg; J. L. Hoyt

doi:10.1016/j.apsusc.2003.08.029

On the mechanism of ion-implanted As diffusion in relaxed SiGe

S. Eguchi, J. J. Lee, S. J. Rhee, D. L. Kwong, M. L. Lee, E. A. Fitzgerald, I. Åberg, J. L. Hoyt

Research output: Contribution to journal › Article › peer-review

Abstract

The diffusion behavior of ion-implanted arsenic in strained Si/relaxed Si _0.8 Ge _0.2 structures is studied during rapid thermal processing in oxygen (interstitial injection) and ammonia (vacancy injection). During rapid thermal processing in an oxygen ambient, arsenic diffusion in SiGe is reduced, while an ammonia ambient produces strong enhancement, especially for short times. The results suggest that arsenic diffusion in SiGe has a stronger vacancy component than arsenic diffusion in Si. Vacancy injection is also observed to enhance the diffusivity of Ge from relaxed SiGe into strained Si.

Original language	English (US)
Pages (from-to)	59-62
Number of pages	4
Journal	Applied Surface Science
Volume	224
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.08.029
State	Published - Mar 15 2004
Externally published	Yes

Keywords

Arsenic
Diffusion
Silicon Germanium

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

Online availability

10.1016/j.apsusc.2003.08.029

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title = "On the mechanism of ion-implanted As diffusion in relaxed SiGe",

abstract = " The diffusion behavior of ion-implanted arsenic in strained Si/relaxed Si 0.8 Ge 0.2 structures is studied during rapid thermal processing in oxygen (interstitial injection) and ammonia (vacancy injection). During rapid thermal processing in an oxygen ambient, arsenic diffusion in SiGe is reduced, while an ammonia ambient produces strong enhancement, especially for short times. The results suggest that arsenic diffusion in SiGe has a stronger vacancy component than arsenic diffusion in Si. Vacancy injection is also observed to enhance the diffusivity of Ge from relaxed SiGe into strained Si.",

keywords = "Arsenic, Diffusion, Silicon Germanium",

author = "S. Eguchi and Lee, {J. J.} and Rhee, {S. J.} and Kwong, {D. L.} and Lee, {M. L.} and Fitzgerald, {E. A.} and I. {\AA}berg and Hoyt, {J. L.}",

note = "Funding Information: The authors from MIT acknowledge the support of Hitachi Ltd., SRC and DARPA.",

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doi = "10.1016/j.apsusc.2003.08.029",

language = "English (US)",

volume = "224",

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journal = "Applied Surface Science",

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TY - JOUR

T1 - On the mechanism of ion-implanted As diffusion in relaxed SiGe

AU - Eguchi, S.

AU - Lee, J. J.

AU - Rhee, S. J.

AU - Kwong, D. L.

AU - Lee, M. L.

AU - Fitzgerald, E. A.

AU - Åberg, I.

AU - Hoyt, J. L.

N1 - Funding Information: The authors from MIT acknowledge the support of Hitachi Ltd., SRC and DARPA.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - The diffusion behavior of ion-implanted arsenic in strained Si/relaxed Si 0.8 Ge 0.2 structures is studied during rapid thermal processing in oxygen (interstitial injection) and ammonia (vacancy injection). During rapid thermal processing in an oxygen ambient, arsenic diffusion in SiGe is reduced, while an ammonia ambient produces strong enhancement, especially for short times. The results suggest that arsenic diffusion in SiGe has a stronger vacancy component than arsenic diffusion in Si. Vacancy injection is also observed to enhance the diffusivity of Ge from relaxed SiGe into strained Si.

AB - The diffusion behavior of ion-implanted arsenic in strained Si/relaxed Si 0.8 Ge 0.2 structures is studied during rapid thermal processing in oxygen (interstitial injection) and ammonia (vacancy injection). During rapid thermal processing in an oxygen ambient, arsenic diffusion in SiGe is reduced, while an ammonia ambient produces strong enhancement, especially for short times. The results suggest that arsenic diffusion in SiGe has a stronger vacancy component than arsenic diffusion in Si. Vacancy injection is also observed to enhance the diffusivity of Ge from relaxed SiGe into strained Si.

KW - Arsenic

KW - Diffusion

KW - Silicon Germanium

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DO - 10.1016/j.apsusc.2003.08.029

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JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

On the mechanism of ion-implanted As diffusion in relaxed SiGe

Abstract

Keywords

ASJC Scopus subject areas

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