On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors

Kangguo Cheng, Jean-Pierre Leburton, Karl Hess, Joseph W Lyding

Research output: Contribution to journalArticle

Abstract

The interpretation of the small hydrogen/deuterium isotope effect widely observed under uniform stress has been based on an implicit assumption that interface traps in the entire channel are passivated by deuterium after the deuterium annealing process. Through a stress/anneal process, we show that this assumption is incorrect. Instead, our results clearly suggest that interface trap generation under both nonuniform channel hot-carrier stress and uniform stress, such as Fowler-Nordheim tunneling and substrate electron injection, essentially follows the same mechanism, which is the breaking of Si-H(D) bonds and the release of hydrogen/deuterium at the oxide/silicon interface.

Original languageEnglish (US)
Pages (from-to)863-865
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number6
DOIs
StatePublished - Aug 6 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors'. Together they form a unique fingerprint.

  • Cite this