On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Zhi Chen, Karl Hess, Jinju Lee, Joseph W Lyding, Elyse Rosenbaum, Isik Kizilyalli, Sundar Chetlur, Robert Huang

Research output: Contribution to journalArticle

Abstract

The classical concept and theory suggest that the degradation of MOS transistors is caused by interface trap generation resulting from `hot carrier injection.' We report three new experiments that use the deuterium isotope effect to probe the mechanism for interface trap generation in n-MOS transistors in the presence of hot hole and electron injection. These experiments show clearly that hot carrier injection into the gate oxide exhibits essentially no isotope effect, whereas channel hot electrons at the interface exhibit a large isotope effect. This leads to the conclusion that channel hot electrons, not carriers injected into the gate oxide, are primarily responsible for interface trap generation for standard hot carrier stressing.

Original languageEnglish (US)
Pages (from-to)24-26
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number1
DOIs
StatePublished - Jan 1 2000

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Hot carriers
MOSFET devices
Isotopes
Hot electrons
Oxides
Electron injection
Deuterium
Experiments
Degradation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing. / Chen, Zhi; Hess, Karl; Lee, Jinju; Lyding, Joseph W; Rosenbaum, Elyse; Kizilyalli, Isik; Chetlur, Sundar; Huang, Robert.

In: IEEE Electron Device Letters, Vol. 21, No. 1, 01.01.2000, p. 24-26.

Research output: Contribution to journalArticle

Chen, Zhi ; Hess, Karl ; Lee, Jinju ; Lyding, Joseph W ; Rosenbaum, Elyse ; Kizilyalli, Isik ; Chetlur, Sundar ; Huang, Robert. / On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing. In: IEEE Electron Device Letters. 2000 ; Vol. 21, No. 1. pp. 24-26.
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