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On the incorporation of arsenic (As) in GaN films by conventional MOCVD
X. Li
, S. Kim
, S. G. Bishop
, J. J. Coleman
Electrical and Computer Engineering
Research output
:
Contribution to journal
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Conference article
›
peer-review
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Dive into the research topics of 'On the incorporation of arsenic (As) in GaN films by conventional MOCVD'. Together they form a unique fingerprint.
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Keyphrases
Arsenic
100%
Arsenic Sources
25%
Arsine
25%
Atmospheric Pressure
25%
Characteristic Emission
50%
Emission Spectrum
25%
Exciton
25%
GaN Films
100%
Isoelectronic Impurities
25%
Luminescence
25%
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
N Sources
25%
Optimum Growth Conditions
25%
Engineering
Arsenic
100%
Atmospheric Pressure
20%
Chemical Vapor Deposition
100%
Emission Wavelength
20%
Growth Condition
20%
Isoelectronic Impurity
20%
Vapor Deposition
100%
Material Science
Arsenic
100%
Chemical Vapor Deposition
100%
Film
100%
Luminescence
20%
Earth and Planetary Sciences
Atmospheric Pressure
50%
Emissions
100%
Exciton
50%
Metalorganic Chemical Vapor Deposition
100%
Chemistry
Ammonia
50%
Bound Exciton
50%
Doping
50%
Emission Wavelength
50%
Metallorganic Chemical Vapor Deposition
100%
Chemical Engineering
Film
100%
Metallorganic Chemical Vapor Deposition
100%