On the incorporation of arsenic (As) in GaN films by conventional MOCVD

X. Li; S. Kim; S. G. Bishop; J. J. Coleman

On the incorporation of arsenic (As) in GaN films by conventional MOCVD

X. Li, S. Kim, S. G. Bishop, J. J. Coleman

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Arsenic was incorporated in GaN films by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) using AsH₃ and NH₃ as the As and N sources. The optimum growth condition for the doping of As in order to produce strong luminescence at a characteristic emission wavelength (approximately 480 nm) was determined. The characteristic emission is attributed to excitons bound at As isoelectronic impurities.

Original language	English (US)
Pages (from-to)	8
Number of pages	1
Journal	LEOS Summer Topical Meeting
State	Published - 1997
Event	Proceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can Duration: Aug 11 1997 → Aug 15 1997

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "On the incorporation of arsenic (As) in GaN films by conventional MOCVD",

abstract = "Arsenic was incorporated in GaN films by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) using AsH3 and NH3 as the As and N sources. The optimum growth condition for the doping of As in order to produce strong luminescence at a characteristic emission wavelength (approximately 480 nm) was determined. The characteristic emission is attributed to excitons bound at As isoelectronic impurities.",

author = "X. Li and S. Kim and Bishop, {S. G.} and Coleman, {J. J.}",

year = "1997",

language = "English (US)",

pages = "8",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 LEOS Summer Topical Meeting ; Conference date: 11-08-1997 Through 15-08-1997",

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TY - JOUR

T1 - On the incorporation of arsenic (As) in GaN films by conventional MOCVD

AU - Li, X.

AU - Kim, S.

AU - Bishop, S. G.

AU - Coleman, J. J.

PY - 1997

Y1 - 1997

N2 - Arsenic was incorporated in GaN films by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) using AsH3 and NH3 as the As and N sources. The optimum growth condition for the doping of As in order to produce strong luminescence at a characteristic emission wavelength (approximately 480 nm) was determined. The characteristic emission is attributed to excitons bound at As isoelectronic impurities.

AB - Arsenic was incorporated in GaN films by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) using AsH3 and NH3 as the As and N sources. The optimum growth condition for the doping of As in order to produce strong luminescence at a characteristic emission wavelength (approximately 480 nm) was determined. The characteristic emission is attributed to excitons bound at As isoelectronic impurities.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030717243&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030717243

SN - 1099-4742

SP - 8

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

T2 - Proceedings of the 1997 LEOS Summer Topical Meeting

Y2 - 11 August 1997 through 15 August 1997

ER -

On the incorporation of arsenic (As) in GaN films by conventional MOCVD

Abstract

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