On the incorporation of arsenic (As) in GaN films by conventional MOCVD

Xiuling Li, S. Kim, S. G. Bishop, J. J. Coleman

Research output: Contribution to journalConference article

Abstract

Arsenic was incorporated in GaN films by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) using AsH3 and NH3 as the As and N sources. The optimum growth condition for the doping of As in order to produce strong luminescence at a characteristic emission wavelength (approximately 480 nm) was determined. The characteristic emission is attributed to excitons bound at As isoelectronic impurities.

Original languageEnglish (US)
Number of pages1
JournalLEOS Summer Topical Meeting
StatePublished - Jan 1 1997
EventProceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can
Duration: Aug 11 1997Aug 15 1997

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Metallorganic chemical vapor deposition
Arsenic
arsenic
metalorganic chemical vapor deposition
Excitons
Atmospheric pressure
Luminescence
atmospheric pressure
Doping (additives)
excitons
Impurities
luminescence
Wavelength
impurities
wavelengths

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

On the incorporation of arsenic (As) in GaN films by conventional MOCVD. / Li, Xiuling; Kim, S.; Bishop, S. G.; Coleman, J. J.

In: LEOS Summer Topical Meeting, 01.01.1997.

Research output: Contribution to journalConference article

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AU - Coleman, J. J.

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