Abstract
An experimental coherent electron microdiffraction pattern obtained from a sub-nanometer region of silicon is used to show that zero- and higher-order Laue zone Bragg reflections may make an important contribution to high-angle dark-field (HAD) STEM lattice images. For one commonly used HAD detector, contrast is expected to result mainly from interference between overlapping orders of the Bragg coherent convergent-beam electron diffraction pattern.
Original language | English (US) |
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Pages (from-to) | 233-239 |
Number of pages | 7 |
Journal | Ultramicroscopy |
Volume | 31 |
Issue number | 2 |
DOIs | |
State | Published - Oct 1989 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Instrumentation