On-Chip Single-Shot Pulse Generator for TDDB Characterization on a Sub-Nanosecond Timescale

Matthew Drallmeier, Yujie Zhou, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

During charged device model (CDM) electrostatic discharge (ESD) events, MOSFET gate oxides may be exposed to high voltage stress lasting for a few hundred picoseconds or less, and the gate oxide breakdown voltage is an important parameter for ESD designers. This work presents an on-chip pulse generator fabricated in a 65-nm CMOS process capable of producing clean single-shot pulses with amplitude up to 6 V and pulse width as short as 200 ps. The pulse generator is used for an experimental investigation of MOS gate oxide breakdown voltage on a sub-ns timescale and to assess the validity of the power-law model.

Original languageEnglish (US)
Title of host publication2024 IEEE International Reliability Physics Symposium, IRPS 2024 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350369762
DOIs
StatePublished - 2024
Externally publishedYes
Event2024 IEEE International Reliability Physics Symposium, IRPS 2024 - Grapevine, United States
Duration: Apr 14 2024Apr 18 2024

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2024 IEEE International Reliability Physics Symposium, IRPS 2024
Country/TerritoryUnited States
CityGrapevine
Period4/14/244/18/24

Keywords

  • charged device model (CDM)
  • Electrostatic discharge (ESD)
  • time dependent dielectric breakdown (TDDB)

ASJC Scopus subject areas

  • General Engineering

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