OMVPE-Grown InAIAs/InGaAs /InP MODFET’s with Performance Comparable to those Grown by MBE

Minh Tong, Kari Nummila, Andrew Ketterson, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review


The performance comparison of current-gain cutoff frequency fTbetween InAIAs/InGaAs/InP MODFET’s on OMVPE-grown heterostructures and MBE-grown heterostructures is presented. InAlAs/InGaAs/InP MODFET’s on OMVPE-grown heterostructures have been fabricated with different Gate lengths from 2.5 to 0.27 pm. An effective electron saturation velocity of 2.0 x 107cm /s is deduced from an fT• Lgproduct of 32 GHz • pm. An extrinsic dc transconductance gmas high as 1020 mS/mm, and an fTof over 114 GHz at room temperature have been achieved for 0.27-pm gate-length MOD-FET’s. It is shown that these values, and indeed, the device characteristics obtained at all gate lengths compare favorably with the best results reported in the literature for MODFET’s on heterostructures grown by MBE.

Original languageEnglish (US)
Pages (from-to)2411-2413
Number of pages3
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - Oct 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'OMVPE-Grown InAIAs/InGaAs /InP MODFET’s with Performance Comparable to those Grown by MBE'. Together they form a unique fingerprint.

Cite this