Ohmic contacts to n-type GaN using Pd/Al metallization

A. T. Ping, M. Asif Khan, I. Adesida

Research output: Contribution to journalArticlepeer-review


Ohmic contacts to n-type GaN grown by metalorganic chemical vapor deposition were formed using a Pd/Al-based metallization. Ohmic contact resistances and specific contact resistances were investigated as a function of rapid thermal annealing temperature, Pd interlayer thickness, and annealing time. As-deposited Pd/Al was found to produce rectifying contacts while the metallization exhibited ohmic characteristics after annealing at temperatures as low as 400°C. A minimum contact resistance of 0.9 ohm-mm (specific contact resistance = 1.2 × 10-5 ohm-cm2) was obtained upon annealing at 650°C for 30 s. For comparison, Al and Ti/Al contacts were also investigated. Auger electron spectroscopy, secondary ion mass spectrometry, and x-ray diffraction were used to investigate metallurgical reactions.

Original languageEnglish (US)
Pages (from-to)819-824
Number of pages6
JournalJournal of Electronic Materials
Issue number5
StatePublished - May 1996


  • Gallium nitride (GaN)
  • Ohmic contacts

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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