Low-resistance ohmic contacts on Al0.59Ga0.41N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10-5Ωcm2 was achieved using a pre-metallisation treatment of the surface in an SiCl4 plasma with a self-bias voltage of -300 V in a reactive ion etching system.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Jul 4 2002|
ASJC Scopus subject areas
- Electrical and Electronic Engineering