Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors

D. Selvanathan, L. Zhou, V. Kumar, J. P. Long, M. A.L. Johnson, J. F. Schetzina, I. Adesida

Research output: Contribution to journalArticlepeer-review


Low-resistance ohmic contacts on Al0.59Ga0.41N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10-5Ωcm2 was achieved using a pre-metallisation treatment of the surface in an SiCl4 plasma with a self-bias voltage of -300 V in a reactive ion etching system.

Original languageEnglish (US)
Pages (from-to)755-756
Number of pages2
JournalElectronics Letters
Issue number14
StatePublished - Jul 4 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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