Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors

D. Selvanathan; L. Zhou; V. Kumar; J. P. Long; M. A.L. Johnson; J. F. Schetzina; I. Adesida

doi:10.1049/el:20020500

Ohmic contacts on n-type Al_0.59Ga_0.41N for solar blind detectors

D. Selvanathan, L. Zhou, V. Kumar, J. P. Long, M. A.L. Johnson, J. F. Schetzina, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

Low-resistance ohmic contacts on Al_0.59Ga_0.41N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10^-5Ωcm² was achieved using a pre-metallisation treatment of the surface in an SiCl₄ plasma with a self-bias voltage of -300 V in a reactive ion etching system.

Original language	English (US)
Pages (from-to)	755-756
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	14
DOIs	https://doi.org/10.1049/el:20020500
State	Published - Jul 4 2002
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:20020500

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Cite this

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abstract = "Low-resistance ohmic contacts on Al0.59Ga0.41N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10-5Ωcm2 was achieved using a pre-metallisation treatment of the surface in an SiCl4 plasma with a self-bias voltage of -300 V in a reactive ion etching system.",

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AU - Selvanathan, D.

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AU - Kumar, V.

AU - Long, J. P.

AU - Johnson, M. A.L.

AU - Schetzina, J. F.

AU - Adesida, I.

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AB - Low-resistance ohmic contacts on Al0.59Ga0.41N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10-5Ωcm2 was achieved using a pre-metallisation treatment of the surface in an SiCl4 plasma with a self-bias voltage of -300 V in a reactive ion etching system.

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