Observation of tunnelling real-space transfer in pseudomorphic MODFETS at T = 300 K

J. M. Biglow, J. Laskar, J. Kolodzey, J. P. Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

Abrupt negative differential resistance (NDR) in the I-V characteristics of AlGaAs-InGaAs-GaAs pseudomorphic MODFETS at room temperature is interpreted as due to tunnelling real-space transfer (TRST) which occurs when the wavefunctions of the upper electron states in the InGaAs channel hybridize with quantized states in the AlGaAs layer and induce a charge transfer from the high-mobility channel to the low-mobility AlGaAs. The theoretical model predicts the onset of abrupt NDR in the I-V characteristics in excellent agreement with the experimental results.

Original languageEnglish (US)
Pages (from-to)1096-1099
Number of pages4
JournalSemiconductor Science and Technology
Volume6
Issue number11
DOIs
StatePublished - Nov 1 1991

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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