Abstract
Abrupt negative differential resistance (NDR) in the I-V characteristics of AlGaAs-InGaAs-GaAs pseudomorphic MODFETS at room temperature is interpreted as due to tunnelling real-space transfer (TRST) which occurs when the wavefunctions of the upper electron states in the InGaAs channel hybridize with quantized states in the AlGaAs layer and induce a charge transfer from the high-mobility channel to the low-mobility AlGaAs. The theoretical model predicts the onset of abrupt NDR in the I-V characteristics in excellent agreement with the experimental results.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1096-1099 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 6 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 1991 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry