Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy

S. Kim, S. J. Rhee, D. A. Turnbull, E. E. Reuter, X. Li, J. J. Coleman, S. G. Bishop

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Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the 1540 nm 4I13/24I15/2 emission of Er3+ in Er-implanted films of GaN grown by metalorganic chemical vapor deposition. The PLE spectra exhibit several broad below-gap absorption bands, which excite three distinct site-selective Er3+ PL spectra. The excitation of two of the site-selective Er PL bands involves optical absorption by defects or background impurities, rather than direct intra-f shell absorption, with subsequent nonradiative transfer of the energy to nearby Er3+ luminescence centers. The characteristics of the PLE spectrum of the third site-selective PL band suggest that an exciton bound at an Er-related trap is involved in the excitation mechanism.

Original languageEnglish (US)
Pages (from-to)231-233
Number of pages3
JournalApplied Physics Letters
Issue number2
StatePublished - Jul 14 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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