Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the 1540 nm 4I13/2→4I15/2 emission of Er3+ in Er-implanted films of GaN grown by metalorganic chemical vapor deposition. The PLE spectra exhibit several broad below-gap absorption bands, which excite three distinct site-selective Er3+ PL spectra. The excitation of two of the site-selective Er PL bands involves optical absorption by defects or background impurities, rather than direct intra-f shell absorption, with subsequent nonradiative transfer of the energy to nearby Er3+ luminescence centers. The characteristics of the PLE spectrum of the third site-selective PL band suggest that an exciton bound at an Er-related trap is involved in the excitation mechanism.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Jul 14 1997|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)