TY - JOUR
T1 - Observation of large magnetoresistance switching in topological-insulator/ferromagnetic-metal heterostructure with perpendicular magnetic anisotropy
AU - Oh, Junseok
AU - Humbert, Vincent
AU - Macdougall, Gregory J.
AU - Gilbert, Matthew J.
AU - Mason, Nadya
N1 - This work is supported by the Army Research Office for measurements and analysis under W911NF2010024 and by the National Science Foundation for sample fabrication under the University of Illinois at Urbana Champaign, Materials Research Science and Engineering Center Grant No. DMR-1720633. Research performed using the QD MPMS3 and PPMS instruments was carried out in part in the Materials Research Laboratory Central Research Facilities, University of Illinois.
PY - 2024/5
Y1 - 2024/5
N2 - In the last decade, studies of magnetoresistance in heterostructures of topological insulator (TI) and ferromagnetic (FM) insulators have indicated the existence of induced magnetization at TI surfaces. However, the magnetic proximity effect in heterostructures of TIs and FM metals has been less explored. Here, we report a spin-valve-like magnetoresistance (MR) switching observed in a bilayer device of Bi2Se3 and a Co/Pt multilayer ([Co/Pt]), where the [Co/Pt] is a FM metal with a perpendicular magnetic anisotropy. This MR switching happens at temperatures below 1 K and for magnetic field sweeps along all in-plane and out-of-plane directions, at values much lower than the magnetization switching fields of the top FM layer. The in-plane field sweeps at various angles also reveal a threefold symmetry of the switching fields, matching the symmetry of the TI crystal structure. We suggest that the large MR switching rises from the interplay between the magnetization of the top FM metal layer and the induced magnetization at the TI surface.
AB - In the last decade, studies of magnetoresistance in heterostructures of topological insulator (TI) and ferromagnetic (FM) insulators have indicated the existence of induced magnetization at TI surfaces. However, the magnetic proximity effect in heterostructures of TIs and FM metals has been less explored. Here, we report a spin-valve-like magnetoresistance (MR) switching observed in a bilayer device of Bi2Se3 and a Co/Pt multilayer ([Co/Pt]), where the [Co/Pt] is a FM metal with a perpendicular magnetic anisotropy. This MR switching happens at temperatures below 1 K and for magnetic field sweeps along all in-plane and out-of-plane directions, at values much lower than the magnetization switching fields of the top FM layer. The in-plane field sweeps at various angles also reveal a threefold symmetry of the switching fields, matching the symmetry of the TI crystal structure. We suggest that the large MR switching rises from the interplay between the magnetization of the top FM metal layer and the induced magnetization at the TI surface.
UR - http://www.scopus.com/inward/record.url?scp=85193035308&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85193035308&partnerID=8YFLogxK
U2 - 10.1103/PhysRevMaterials.8.054202
DO - 10.1103/PhysRevMaterials.8.054202
M3 - Article
AN - SCOPUS:85193035308
SN - 2475-9953
VL - 8
JO - Physical Review Materials
JF - Physical Review Materials
IS - 5
M1 - 054202
ER -