Observation of core-level binding energy shifts between (100) surface and bulk atoms of epitaxial CuInSe2

A. J. Nelson, G. Berry, Angus Rockett, D. K. Shuh, J. A. Carlisle, D. G.J. Sutherland, L. J. Terminello

Research output: Contribution to journalArticlepeer-review

Abstract

Synchrotron radiation soft x-ray photoemission spectroscopy was used to directly observe Se 3d core-level binding energy shifts from surface atoms of the (100) face of epitaxial CuInSe2/ GaAs(100). High-resolution spectra show two sets of Se 3d5/2,3/2 spin-orbit components separated by 0.6 eV, with the low-binding-energy peaks being associated with the surface atoms. However, surface state emission from Se p states in the valence band was not observed due to the low photoionization cross sections. Cation bonding-antibonding states were observed in the valence band and are centered at about 1.0 and 3.1 eV below the valence band edge.

Original languageEnglish (US)
Pages (from-to)1873-1875
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number14
DOIs
StatePublished - Apr 7 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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