Numerical simulation of electron transport through constriction in a metallic thin film

Siva P. Gurrum; Yogendra K. Joshi; William P. King; Koneru Ramakrishna

doi:10.1109/LED.2004.835538

Numerical simulation of electron transport through constriction in a metallic thin film

Siva P. Gurrum, Yogendra K. Joshi, William P. King, Koneru Ramakrishna

Research output: Contribution to journal › Article › peer-review

Abstract

Electron transport through a constriction in a thin metallic film of finite thickness is simulated by numerically solving the Boltzmann transport equation (BTE) within the relaxation time approximation under linear response conditions. Such a structure closely represents vias connecting metal levels of different widths. Predicted reduction in effective electrical conductance due to electron surface scattering, which is significant when the dimensions are of the order of carrier mean free path, is compared with that for a constriction between semi-infinite spaces available in the literature. A simple expression for the size effect on conductance is fit to the simulated results applicable for constriction in a finite size thin film. The results could enable better estimate of effective resistance of next generation on-chip interconnections.

Original language	English (US)
Pages (from-to)	696-698
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	10
DOIs	https://doi.org/10.1109/LED.2004.835538
State	Published - Oct 2004
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2004.835538

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abstract = "Electron transport through a constriction in a thin metallic film of finite thickness is simulated by numerically solving the Boltzmann transport equation (BTE) within the relaxation time approximation under linear response conditions. Such a structure closely represents vias connecting metal levels of different widths. Predicted reduction in effective electrical conductance due to electron surface scattering, which is significant when the dimensions are of the order of carrier mean free path, is compared with that for a constriction between semi-infinite spaces available in the literature. A simple expression for the size effect on conductance is fit to the simulated results applicable for constriction in a finite size thin film. The results could enable better estimate of effective resistance of next generation on-chip interconnections.",

author = "Gurrum, {Siva P.} and Joshi, {Yogendra K.} and King, {William P.} and Koneru Ramakrishna",

note = "Funding Information: Manuscript received June 10, 2004; revised July 23, 2004. This work was supported by the Semiconductor Research Corporation (SRC) under Task 1179.001. The review of this letter was arranged by Editor E. Sangiorgi.",

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AU - Gurrum, Siva P.

AU - Joshi, Yogendra K.

AU - King, William P.

AU - Ramakrishna, Koneru

N1 - Funding Information: Manuscript received June 10, 2004; revised July 23, 2004. This work was supported by the Semiconductor Research Corporation (SRC) under Task 1179.001. The review of this letter was arranged by Editor E. Sangiorgi.

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N2 - Electron transport through a constriction in a thin metallic film of finite thickness is simulated by numerically solving the Boltzmann transport equation (BTE) within the relaxation time approximation under linear response conditions. Such a structure closely represents vias connecting metal levels of different widths. Predicted reduction in effective electrical conductance due to electron surface scattering, which is significant when the dimensions are of the order of carrier mean free path, is compared with that for a constriction between semi-infinite spaces available in the literature. A simple expression for the size effect on conductance is fit to the simulated results applicable for constriction in a finite size thin film. The results could enable better estimate of effective resistance of next generation on-chip interconnections.

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Numerical simulation of electron transport through constriction in a metallic thin film

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