TY - GEN
T1 - N2 defects in silicon nitride for quantum applications
AU - Shinbrough, Kai
AU - Fang, Kejie
AU - Lorenz, Virginia
N1 - We have laid the groundwork for the use of trapped N2 molecules in silicon nitride for quantum applications. Future work will be directed toward the development of integrated silicon nitride waveguides, wherein we anticipate the N2 light-matter interaction will be greatly enhanced and the signal to noise of the Stokes and anti-Stokes spectra greatly improved. This will allow for determination of the Stokes and anti-Stokes photon purities via g(2) auto-correlation measurement and the Stokes–anti-Stokes coincidence to accidental ratio (CAR) via g(2) cross-correlation measurement. Furthermore an integrated, high-brightness source of Stokes–anti-Stokes photon pairs will allow for photon-pair generation with controllable delay as well as other potential applications in quantum memory and quantum networking. This work is supported by NSF award Nos. 1806572, 1640968, and DMR-1747426.
PY - 2020
Y1 - 2020
N2 - We present preliminary data on Raman-active nitrogen molecules trapped in amorphous silicon nitride thin films, and detail the potential use of these emitters for quantum applications.
AB - We present preliminary data on Raman-active nitrogen molecules trapped in amorphous silicon nitride thin films, and detail the potential use of these emitters for quantum applications.
UR - https://www.scopus.com/pages/publications/85095112296
UR - https://www.scopus.com/pages/publications/85095112296#tab=citedBy
U2 - 10.1364/CLEO_AT.2020.JTu2A.11
DO - 10.1364/CLEO_AT.2020.JTu2A.11
M3 - Conference contribution
AN - SCOPUS:85095112296
SN - 9781943580767
T3 - Optics InfoBase Conference Papers
BT - CLEO
PB - Optica Publishing Group (formerly OSA)
T2 - CLEO: Applications and Technology, CLEO_AT 2020
Y2 - 10 May 2020 through 15 May 2020
ER -