Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals

Shang Chun Lu; Mohamed Mohamed; Wenjuan Zhu

doi:10.1088/2053-1583/3/1/011010

Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals

Shang Chun Lu, Mohamed Mohamed, Wenjuan Zhu

Research output: Contribution to journal › Article › peer-review

Abstract

Vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides are proposed and studied by numerical simulations employing the semi-classical density gradient quantum correction model. It is found that the vertical TFET based on BP can achieve high on-current (>200 μA μm^-1) and steep subthreshold swing (average value = 24.6 mV/dec) simultaneously, due to its high mobility, direct narrow bandgap, and low dielectric constant.Wealso found that the on-current in vertical TFETs based on MoS₂/MoSe₂ hetero-junction is two orders of magnitudes higher than the one in MoS₂ homo-junction TFET, due to the reduced effective bandgap in heterostructure with staggered band alignment. In addition, we present various design considerations and recommendations as well as provide a qualitative comparison with published data.

Original language	English (US)
Article number	011010
Journal	2D Materials
Volume	3
Issue number	1
DOIs	https://doi.org/10.1088/2053-1583/3/1/011010
State	Published - 2016

Keywords

2D materials
Black phosphorus
MoS
MoSe
Steep transistor
Transition metal dichalcogenides
Tunnel FET

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1088/2053-1583/3/1/011010

Cite this

@article{928b27db661a420bac9056a3c66ea743,

title = "Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals",

abstract = "Vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides are proposed and studied by numerical simulations employing the semi-classical density gradient quantum correction model. It is found that the vertical TFET based on BP can achieve high on-current (>200 μA μm-1) and steep subthreshold swing (average value = 24.6 mV/dec) simultaneously, due to its high mobility, direct narrow bandgap, and low dielectric constant.Wealso found that the on-current in vertical TFETs based on MoS2/MoSe2 hetero-junction is two orders of magnitudes higher than the one in MoS2 homo-junction TFET, due to the reduced effective bandgap in heterostructure with staggered band alignment. In addition, we present various design considerations and recommendations as well as provide a qualitative comparison with published data.",

keywords = "2D materials, Black phosphorus, MoS, MoSe, Steep transistor, Transition metal dichalcogenides, Tunnel FET",

author = "Lu, {Shang Chun} and Mohamed Mohamed and Wenjuan Zhu",

note = "Publisher Copyright: {\textcopyright}2016 IOP Publishing Ltd.",

year = "2016",

doi = "10.1088/2053-1583/3/1/011010",

language = "English (US)",

volume = "3",

journal = "2D Materials",

issn = "2053-1583",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals

AU - Lu, Shang Chun

AU - Mohamed, Mohamed

AU - Zhu, Wenjuan

PY - 2016

Y1 - 2016

N2 - Vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides are proposed and studied by numerical simulations employing the semi-classical density gradient quantum correction model. It is found that the vertical TFET based on BP can achieve high on-current (>200 μA μm-1) and steep subthreshold swing (average value = 24.6 mV/dec) simultaneously, due to its high mobility, direct narrow bandgap, and low dielectric constant.Wealso found that the on-current in vertical TFETs based on MoS2/MoSe2 hetero-junction is two orders of magnitudes higher than the one in MoS2 homo-junction TFET, due to the reduced effective bandgap in heterostructure with staggered band alignment. In addition, we present various design considerations and recommendations as well as provide a qualitative comparison with published data.

AB - Vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides are proposed and studied by numerical simulations employing the semi-classical density gradient quantum correction model. It is found that the vertical TFET based on BP can achieve high on-current (>200 μA μm-1) and steep subthreshold swing (average value = 24.6 mV/dec) simultaneously, due to its high mobility, direct narrow bandgap, and low dielectric constant.Wealso found that the on-current in vertical TFETs based on MoS2/MoSe2 hetero-junction is two orders of magnitudes higher than the one in MoS2 homo-junction TFET, due to the reduced effective bandgap in heterostructure with staggered band alignment. In addition, we present various design considerations and recommendations as well as provide a qualitative comparison with published data.

KW - 2D materials

KW - Black phosphorus

KW - MoS

KW - MoSe

KW - Steep transistor

KW - Transition metal dichalcogenides

KW - Tunnel FET

UR - http://www.scopus.com/inward/record.url?scp=85012103642&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85012103642&partnerID=8YFLogxK

U2 - 10.1088/2053-1583/3/1/011010

DO - 10.1088/2053-1583/3/1/011010

M3 - Article

AN - SCOPUS:85012103642

VL - 3

JO - 2D Materials

JF - 2D Materials

SN - 2053-1583

IS - 1

M1 - 011010

ER -

Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other links

Fingerprint

Cite this