Abstract
Vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides are proposed and studied by numerical simulations employing the semi-classical density gradient quantum correction model. It is found that the vertical TFET based on BP can achieve high on-current (>200 μA μm-1) and steep subthreshold swing (average value = 24.6 mV/dec) simultaneously, due to its high mobility, direct narrow bandgap, and low dielectric constant.Wealso found that the on-current in vertical TFETs based on MoS2/MoSe2 hetero-junction is two orders of magnitudes higher than the one in MoS2 homo-junction TFET, due to the reduced effective bandgap in heterostructure with staggered band alignment. In addition, we present various design considerations and recommendations as well as provide a qualitative comparison with published data.
Original language | English (US) |
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Article number | 011010 |
Journal | 2D Materials |
Volume | 3 |
Issue number | 1 |
DOIs | |
State | Published - 2016 |
Keywords
- 2D materials
- Black phosphorus
- MoS
- MoSe
- Steep transistor
- Transition metal dichalcogenides
- Tunnel FET
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering