Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals

Shang Chun Lu, Mohamed Mohamed, Wenjuan Zhu

Research output: Contribution to journalArticlepeer-review

Abstract

Vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides are proposed and studied by numerical simulations employing the semi-classical density gradient quantum correction model. It is found that the vertical TFET based on BP can achieve high on-current (>200 μA μm-1) and steep subthreshold swing (average value = 24.6 mV/dec) simultaneously, due to its high mobility, direct narrow bandgap, and low dielectric constant.Wealso found that the on-current in vertical TFETs based on MoS2/MoSe2 hetero-junction is two orders of magnitudes higher than the one in MoS2 homo-junction TFET, due to the reduced effective bandgap in heterostructure with staggered band alignment. In addition, we present various design considerations and recommendations as well as provide a qualitative comparison with published data.

Original languageEnglish (US)
Article number011010
Journal2D Materials
Volume3
Issue number1
DOIs
StatePublished - 2016

Keywords

  • 2D materials
  • Black phosphorus
  • MoS
  • MoSe
  • Steep transistor
  • Transition metal dichalcogenides
  • Tunnel FET

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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