Abstract
The success of organic circuits depends on the implementation of novel fabrication techniques, and circuit designs which utilize organic semiconductor characteristics. We present DC, transient, and noise measurements of discrete organic FETs, and use these characteristics in SPICE simulations of complementary MOS circuits ranging in complexity from inverters through shift registers. Source drain contacts are fabricated using electroless Ni/Au electrode deposition, a method well suited for incorporation with other fabrication techniques such as screen printing and microcontact printing.
Original language | English (US) |
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Pages (from-to) | 115-118 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
State | Published - 1999 |
Externally published | Yes |
Event | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: Dec 5 1999 → Dec 8 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry