Novel cubic phase III-nitride complementary metal-oxide-semiconductor transistor technology

C. Bayram, R. Grady, K. Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Here we propose a new wide band gap logic circuitry providing emerging power electronics with reliable logic control capabilities with 500 MHz+ switching speeds and withstanding 300V+. Particularly, a three-stage ring oscillator composed of NMOS (μe = 1000 cm2/V-s) and PMOS (μh = 250 cm2/V-s) cubic phase GaN devices (with VT of 0.77 V and-0.84 V, respectively) is simulated. The propagation delay is minimized by optimizing the width-to-length ratio (W/L) between the NMOS and PMOS devices. Transient response of the simulation illustrates the ability of the CMOS inverter to operate at a maximum frequency of 1.22 GHz with a full voltage swing between VDD of 2.5 V and 0 V. The proposed cutting-edge p-channel GaN high hole mobility transistor (HHMT) solves one of the most longstanding problems in power electronics and constitutes the basis of an innovative reduced total life cycle cost that will serve as the cornerstone of the next generation of integrated, scalable, and reliable power systems.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nano Electronics and Photonics XV
EditorsGiuseppe Leo, Gail J. Brown, Manijeh Razeghi, Jay S. Lewis
PublisherSPIE
ISBN (Electronic)9781510615656
DOIs
StatePublished - 2018
EventQuantum Sensing and Nano Electronics and Photonics XV 2018 - San Francisco, United States
Duration: Jan 28 2018Feb 2 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10540
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherQuantum Sensing and Nano Electronics and Photonics XV 2018
CountryUnited States
CitySan Francisco
Period1/28/182/2/18

Keywords

  • Gallium Nitride
  • high electron mobility transistor
  • high hole mobility transistor
  • logic
  • ring oscillator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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