Nonthermal illumination effects on ultra-shallow junction formation

Ramakrishnan Vaidyanathan, Susan Felch, Houda Graoui, Majeed A. Foad, Yevgeniy Kondratenko, Edmund G. Seebauer

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Abstract

In this letter, we present direct and unambiguous experimental evidence for nonthermal illumination effects in boron or arsenic implanted silicon. Both, dopant diffusion and activation vary significantly with illumination. Depending on annealing temperature, diffusion is either enhanced or inhibited. The results have significant implications for modeling and formation of ultrashallow junctions.

Original languageEnglish (US)
Article number194104
JournalApplied Physics Letters
Volume98
Issue number19
DOIs
StatePublished - May 9 2011

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Vaidyanathan, R., Felch, S., Graoui, H., Foad, M. A., Kondratenko, Y., & Seebauer, E. G. (2011). Nonthermal illumination effects on ultra-shallow junction formation. Applied Physics Letters, 98(19), [194104]. https://doi.org/10.1063/1.3571279