In this letter, we present direct and unambiguous experimental evidence for nonthermal illumination effects in boron or arsenic implanted silicon. Both, dopant diffusion and activation vary significantly with illumination. Depending on annealing temperature, diffusion is either enhanced or inhibited. The results have significant implications for modeling and formation of ultrashallow junctions.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)