@article{6651fc12f61b4592a361e5ee7f97fe7b,
title = "Nonthermal illumination effects on ultra-shallow junction formation",
abstract = "In this letter, we present direct and unambiguous experimental evidence for nonthermal illumination effects in boron or arsenic implanted silicon. Both, dopant diffusion and activation vary significantly with illumination. Depending on annealing temperature, diffusion is either enhanced or inhibited. The results have significant implications for modeling and formation of ultrashallow junctions.",
author = "Ramakrishnan Vaidyanathan and Susan Felch and Houda Graoui and Foad, {Majeed A.} and Yevgeniy Kondratenko and Seebauer, {Edmund G.}",
note = "Funding Information: R.V. acknowledges support of an Applied Materials Fellowship. We thank Tim Spila and Sai Hooi (Allen) Yeong for help with measuring the boron SIMS profiles. Boron SIMS was performed at the Center for Microanalysis of Materials in the Frederick Seitz Materials Research Laboratory, which is partially supported by the U.S. DOE under Grant No. DEFG02-96-ER45439.",
year = "2011",
month = may,
day = "9",
doi = "10.1063/1.3571279",
language = "English (US)",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "19",
}