Abstract
Semiconductor nanowires have potential applications in photovoltaics, batteries, and thermoelectrics. We report a top-down fabrication method that involves the combination of superionic-solid-state-stamping (S4) patterning with metal-assisted-chemical-etching (MacEtch), to produce silicon nanowire arrays with defined geometry and optical properties in a manufacturable fashion. Strong light emission in the entire visible and near infrared wavelength range at room temperature, tunable by etching condition, attributed to surface features, and enhanced by silver surface plasmon, is demonstrated.
Original language | English (US) |
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Pages (from-to) | 1582-1588 |
Number of pages | 7 |
Journal | Nano letters |
Volume | 10 |
Issue number | 5 |
DOIs | |
State | Published - May 12 2010 |
Keywords
- Light-emitting
- Metal-assisted-chemical-etching (MacEtch)
- S4
- Sidewall roughness
- Silicon nanowire
ASJC Scopus subject areas
- Condensed Matter Physics
- Bioengineering
- General Chemistry
- General Materials Science
- Mechanical Engineering