Nonlinear transport of graphene in the quantum Hall regime

Shibing Tian, Pengjie Wang, Xin Liu, Junbo Zhu, Hailong Fu, Takashi Taniguchi, Kenji Watanabe, Jian Hao Chen, Xi Lin

Research output: Contribution to journalArticlepeer-review


We have studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and stabilities of the QH states are studied quantitatively through the nonlinear transport with dc Hall voltage bias. The mechanism of the QH breakdown in graphene and the movement of the Fermi energy with the electrical Hall field are discussed. This is the first study in which the stabilities of fully symmetry broken QH states are probed all together. Our results raise the possibility that the ν = ±6 states might be a better target for the quantum resistance standard.

Original languageEnglish (US)
Article number015003
Journal2D Materials
Issue number1
StatePublished - Mar 1 2017
Externally publishedYes


  • Graphene
  • Quantum Hall effect
  • Quantum resistance standard

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Nonlinear transport of graphene in the quantum Hall regime'. Together they form a unique fingerprint.

Cite this