Nonlinear transport of graphene in the quantum Hall regime

Shibing Tian; Pengjie Wang; Xin Liu; Junbo Zhu; Hailong Fu; Takashi Taniguchi; Kenji Watanabe; Jian Hao Chen; Xi Lin

doi:10.1088/2053-1583/4/1/015003

Nonlinear transport of graphene in the quantum Hall regime

Shibing Tian, Pengjie Wang, Xin Liu, Junbo Zhu, Hailong Fu, Takashi Taniguchi, Kenji Watanabe, Jian Hao Chen, Xi Lin

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and stabilities of the QH states are studied quantitatively through the nonlinear transport with dc Hall voltage bias. The mechanism of the QH breakdown in graphene and the movement of the Fermi energy with the electrical Hall field are discussed. This is the first study in which the stabilities of fully symmetry broken QH states are probed all together. Our results raise the possibility that the ν = ±6 states might be a better target for the quantum resistance standard.

Original language	English (US)
Article number	015003
Journal	2D Materials
Volume	4
Issue number	1
DOIs	https://doi.org/10.1088/2053-1583/4/1/015003
State	Published - Mar 1 2017
Externally published	Yes

Keywords

Graphene
Quantum Hall effect
Quantum resistance standard

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Online availability

10.1088/2053-1583/4/1/015003

Library availability

Discover UIUC Full Text

Cite this

@article{eb8b7afd028f483fa2b2b02e9514f16c,

title = "Nonlinear transport of graphene in the quantum Hall regime",

abstract = "We have studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and stabilities of the QH states are studied quantitatively through the nonlinear transport with dc Hall voltage bias. The mechanism of the QH breakdown in graphene and the movement of the Fermi energy with the electrical Hall field are discussed. This is the first study in which the stabilities of fully symmetry broken QH states are probed all together. Our results raise the possibility that the ν = ±6 states might be a better target for the quantum resistance standard.",

keywords = "Graphene, Quantum Hall effect, Quantum resistance standard",

author = "Shibing Tian and Pengjie Wang and Xin Liu and Junbo Zhu and Hailong Fu and Takashi Taniguchi and Kenji Watanabe and Chen, {Jian Hao} and Xi Lin",

note = "Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2017",

month = mar,

day = "1",

doi = "10.1088/2053-1583/4/1/015003",

language = "English (US)",

volume = "4",

journal = "2D Materials",

issn = "2053-1583",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Nonlinear transport of graphene in the quantum Hall regime

AU - Tian, Shibing

AU - Wang, Pengjie

AU - Liu, Xin

AU - Zhu, Junbo

AU - Fu, Hailong

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - Chen, Jian Hao

AU - Lin, Xi

PY - 2017/3/1

Y1 - 2017/3/1

N2 - We have studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and stabilities of the QH states are studied quantitatively through the nonlinear transport with dc Hall voltage bias. The mechanism of the QH breakdown in graphene and the movement of the Fermi energy with the electrical Hall field are discussed. This is the first study in which the stabilities of fully symmetry broken QH states are probed all together. Our results raise the possibility that the ν = ±6 states might be a better target for the quantum resistance standard.

AB - We have studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and stabilities of the QH states are studied quantitatively through the nonlinear transport with dc Hall voltage bias. The mechanism of the QH breakdown in graphene and the movement of the Fermi energy with the electrical Hall field are discussed. This is the first study in which the stabilities of fully symmetry broken QH states are probed all together. Our results raise the possibility that the ν = ±6 states might be a better target for the quantum resistance standard.

KW - Graphene

KW - Quantum Hall effect

KW - Quantum resistance standard

UR - http://www.scopus.com/inward/record.url?scp=85014498709&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85014498709&partnerID=8YFLogxK

U2 - 10.1088/2053-1583/4/1/015003

DO - 10.1088/2053-1583/4/1/015003

M3 - Article

AN - SCOPUS:85014498709

SN - 2053-1583

VL - 4

JO - 2D Materials

JF - 2D Materials

IS - 1

M1 - 015003

ER -

Nonlinear transport of graphene in the quantum Hall regime

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this