Nonconservation of fermionic degrees of freedom at low energy in doped Mott insulators

Shiladitya Chakraborty, Seungmin Hong, Philip Phillips

Research output: Contribution to journalArticlepeer-review

Abstract

Hall and optical conductivity experiments on the cuprates indicate that the low-energy fermionic degrees of freedom in a doped Mott insulator possess a component that is dynamically generated and hence determined by the temperature. We show explicitly how the spectrum in the lower Hubbard band should be partitioned to describe such dynamically generated charge degrees of freedom and corroborate this picture with the results from the exact low-energy theory of the Hubbard model. A consequence of such dynamics is that the Landau one-to-one correspondence between bare electrons and the effective fermionic degrees of freedom at low energies breaks down explicitly. This state of affairs obtains because the total hole number is not conserved as it contains a dynamical contribution. We propose that any experimental probe that couples to the low-energy dynamics of a doped Mott insulator, quantum oscillation experiments included, should be interpreted in terms of the total dynamically generated hole number rather than the bare value.

Original languageEnglish (US)
Article number235135
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number23
DOIs
StatePublished - Jun 29 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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