Abstract
Nonalloyed refractory emitter contacts for a self-aligned sub-micron InP HBT process have been fabricated. The contacts are annealed up to 420°C and characterized through TLM measurements and SEM examination. It is found that the inclusion of refractory metals such as Mo, W, and TiW effectively increased the stability and integrity of emitter contacts when subjected to high temperatures.
| Original language | English (US) |
|---|---|
| Pages | 247-250 |
| Number of pages | 4 |
| State | Published - 2016 |
| Event | 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States Duration: May 16 2016 → May 19 2016 |
Other
| Other | 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 |
|---|---|
| Country/Territory | United States |
| City | Miami |
| Period | 5/16/16 → 5/19/16 |
Keywords
- Contact
- Emitter
- HBT
- Refractory
- Self-aligned
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
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