Nonalloyed refractory metals for self-aligned InP HBT emitter contacts with InAs/InGaAs emitter cap

Ardy Winoto, Junyi Qiu, Milton Feng

Research output: Contribution to conferencePaper

Abstract

Nonalloyed refractory emitter contacts for a self-aligned sub-micron InP HBT process have been fabricated. The contacts are annealed up to 420°C and characterized through TLM measurements and SEM examination. It is found that the inclusion of refractory metals such as Mo, W, and TiW effectively increased the stability and integrity of emitter contacts when subjected to high temperatures.

Original languageEnglish (US)
Pages247-250
Number of pages4
StatePublished - Jan 1 2016
Event31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States
Duration: May 16 2016May 19 2016

Other

Other31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016
CountryUnited States
CityMiami
Period5/16/165/19/16

Keywords

  • Contact
  • Emitter
  • HBT
  • Refractory
  • Self-aligned

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Winoto, A., Qiu, J., & Feng, M. (2016). Nonalloyed refractory metals for self-aligned InP HBT emitter contacts with InAs/InGaAs emitter cap. 247-250. Paper presented at 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016, Miami, United States.