Non-Volatile Reconfigurable Four-Mode van der Waals Transistors and Transformable Logic Circuits

Junzhe Kang, Hanwool Lee, Ashwin Tunga, Xiaotong Xu, Ye Lin, Zijing Zhao, Hojoon Ryu, Chun Chia Tsai, Takashi Taniguchi, Kenji Watanabe, Shaloo Rakheja, Wenjuan Zhu

Research output: Contribution to journalArticlepeer-review

Abstract

Emerging applications in data-intensive computing and circuit security demand logic circuits with high functional density, reconfigurability, and energy efficiency. Here, we demonstrate nonvolatile reconfigurable four-mode field-effect transistors (NVR4M-FETs) based on two-dimensional (2D) MoTe2 and CuInP2S6 (CIPS), offering both polarity switching and threshold voltage modulation. The device exploits the ferroelectric polarization of CIPS at the source/drain regions to achieve dynamic control over the transistor polarity, enabling transitions between n-type and p-type states through polarization-induced local electrostatic doping. Additionally, multilayer graphene floating gates are incorporated to modulate the threshold voltage, yielding four distinct nonvolatile operating modes: n-type logic, p-type logic, always-on memory, and always-off memory. Leveraging the four-mode property, the NVR4M-FET can function as a one-transistor-per-bit ternary content-addressable memory (TCAM). In addition, we demonstrate the construction of transformable logic gates with 14 distinct logic functions using two NVR4M-FETs and a reconfigurable half a dder/subtractor using three NVR4M-FETs integrated with load resistors. Furthermore, we show that a 2-input look-up table can be achieved with eight NVR4M-FETs compared to 12 transistors using reconfigurable transistors, highlighting the potential of NVR4M-FETs for high-density logic circuits. These results underscore the potential of NVR4M-FETs as essential building blocks for energy-efficient, in-memory computing, and secure hardware applications.

Original languageEnglish (US)
Pages (from-to)12948-12959
Number of pages12
JournalACS Nano
Volume19
Issue number13
Early online dateMar 27 2025
DOIs
StatePublished - Apr 8 2025

Keywords

  • adder and subtractor
  • ferroelectric device
  • in-memory computing
  • look-up table
  • reconfigurable four-mode transistor
  • ternary content-addressable memory

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy

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