TY - JOUR
T1 - Non-Volatile Reconfigurable Four-Mode van der Waals Transistors and Transformable Logic Circuits
AU - Kang, Junzhe
AU - Lee, Hanwool
AU - Tunga, Ashwin
AU - Xu, Xiaotong
AU - Lin, Ye
AU - Zhao, Zijing
AU - Ryu, Hojoon
AU - Tsai, Chun Chia
AU - Taniguchi, Takashi
AU - Watanabe, Kenji
AU - Rakheja, Shaloo
AU - Zhu, Wenjuan
N1 - The authors would like to thank the support of the Semiconductor Research Corporation (SRC) under grant SRC 2021-LM-3042, the Center for Advanced Semiconductor Chips with Accelerated Performance (ASAP) under NSF grant EEC 22-31625 Prog Inc P6 SR, and University of Illinois at Urbana\u2013Champaign under Research Support Award RB25042.
The authors would like to thank the support of the Semiconductor Research Corporation (SRC) under grant SRC 2021-LM-3042, the Center for Advanced Semiconductor Chips with Accelerated Performance (ASAP) under NSF grant EEC 22-31625 Prog Inc P6 SR, and University of Illinois at Urbana-Champaign under Research Support Award RB25042.
PY - 2025/4/8
Y1 - 2025/4/8
N2 - Emerging applications in data-intensive computing and circuit security demand logic circuits with high functional density, reconfigurability, and energy efficiency. Here, we demonstrate nonvolatile reconfigurable four-mode field-effect transistors (NVR4M-FETs) based on two-dimensional (2D) MoTe2 and CuInP2S6 (CIPS), offering both polarity switching and threshold voltage modulation. The device exploits the ferroelectric polarization of CIPS at the source/drain regions to achieve dynamic control over the transistor polarity, enabling transitions between n-type and p-type states through polarization-induced local electrostatic doping. Additionally, multilayer graphene floating gates are incorporated to modulate the threshold voltage, yielding four distinct nonvolatile operating modes: n-type logic, p-type logic, always-on memory, and always-off memory. Leveraging the four-mode property, the NVR4M-FET can function as a one-transistor-per-bit ternary content-addressable memory (TCAM). In addition, we demonstrate the construction of transformable logic gates with 14 distinct logic functions using two NVR4M-FETs and a reconfigurable half a dder/subtractor using three NVR4M-FETs integrated with load resistors. Furthermore, we show that a 2-input look-up table can be achieved with eight NVR4M-FETs compared to 12 transistors using reconfigurable transistors, highlighting the potential of NVR4M-FETs for high-density logic circuits. These results underscore the potential of NVR4M-FETs as essential building blocks for energy-efficient, in-memory computing, and secure hardware applications.
AB - Emerging applications in data-intensive computing and circuit security demand logic circuits with high functional density, reconfigurability, and energy efficiency. Here, we demonstrate nonvolatile reconfigurable four-mode field-effect transistors (NVR4M-FETs) based on two-dimensional (2D) MoTe2 and CuInP2S6 (CIPS), offering both polarity switching and threshold voltage modulation. The device exploits the ferroelectric polarization of CIPS at the source/drain regions to achieve dynamic control over the transistor polarity, enabling transitions between n-type and p-type states through polarization-induced local electrostatic doping. Additionally, multilayer graphene floating gates are incorporated to modulate the threshold voltage, yielding four distinct nonvolatile operating modes: n-type logic, p-type logic, always-on memory, and always-off memory. Leveraging the four-mode property, the NVR4M-FET can function as a one-transistor-per-bit ternary content-addressable memory (TCAM). In addition, we demonstrate the construction of transformable logic gates with 14 distinct logic functions using two NVR4M-FETs and a reconfigurable half a dder/subtractor using three NVR4M-FETs integrated with load resistors. Furthermore, we show that a 2-input look-up table can be achieved with eight NVR4M-FETs compared to 12 transistors using reconfigurable transistors, highlighting the potential of NVR4M-FETs for high-density logic circuits. These results underscore the potential of NVR4M-FETs as essential building blocks for energy-efficient, in-memory computing, and secure hardware applications.
KW - adder and subtractor
KW - ferroelectric device
KW - in-memory computing
KW - look-up table
KW - reconfigurable four-mode transistor
KW - ternary content-addressable memory
UR - http://www.scopus.com/inward/record.url?scp=105002380175&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=105002380175&partnerID=8YFLogxK
U2 - 10.1021/acsnano.4c16862
DO - 10.1021/acsnano.4c16862
M3 - Article
C2 - 40145302
AN - SCOPUS:105002380175
SN - 1936-0851
VL - 19
SP - 12948
EP - 12959
JO - ACS Nano
JF - ACS Nano
IS - 13
ER -