Abstract
A novel Type-I/II DHBT with AlInP emitter and GaAsSb base layers has been developed which demonstrates high gain, balanced fT/f MAX> 400 GHz and BVCEO> 4V. Due to its favorable band alignment, Type- I/II DHBT shows superior DC and RF linearity performance compared with foundry-provided Type-I DHBTs.
| Original language | English (US) |
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| Title of host publication | 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 |
| State | Published - Dec 1 2012 |
| Event | 27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 - Boston, MA, United States Duration: Apr 23 2012 → Apr 26 2012 |
Publication series
| Name | 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 |
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Other
| Other | 27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 4/23/12 → 4/26/12 |
Keywords
- Heterojunction bipolar transistor
- Indium phosphide
- Nonlinearity
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
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Cite this
Xu, H., Iverson, E., Cheng, K. Y., Stuenkel, M., & Feng, M. (2012). Non-linearity characterization of submicron Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs. In 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 (2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012).