@inproceedings{2220908773dd4b15b673844dd2b57a83,
title = "Non-linearity characterization of submicron Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs",
abstract = "A novel Type-I/II DHBT with AlInP emitter and GaAsSb base layers has been developed which demonstrates high gain, balanced fT/f MAX> 400 GHz and BVCEO> 4V. Due to its favorable band alignment, Type- I/II DHBT shows superior DC and RF linearity performance compared with foundry-provided Type-I DHBTs.",
keywords = "Heterojunction bipolar transistor, Indium phosphide, Nonlinearity",
author = "Huiming Xu and Eric Iverson and Cheng, {K. Y.} and Mark Stuenkel and Milton Feng",
year = "2012",
month = dec,
day = "1",
language = "English (US)",
isbn = "1893580199",
series = "2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012",
booktitle = "2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012",
note = "27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 ; Conference date: 23-04-2012 Through 26-04-2012",
}