Non-linearity characterization of submicron Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs

Huiming Xu, Eric Iverson, K. Y. Cheng, Mark Stuenkel, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel Type-I/II DHBT with AlInP emitter and GaAsSb base layers has been developed which demonstrates high gain, balanced fT/f MAX> 400 GHz and BVCEO> 4V. Due to its favorable band alignment, Type- I/II DHBT shows superior DC and RF linearity performance compared with foundry-provided Type-I DHBTs.

Original languageEnglish (US)
Title of host publication2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
StatePublished - Dec 1 2012
Event27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 - Boston, MA, United States
Duration: Apr 23 2012Apr 26 2012

Publication series

Name2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012

Other

Other27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
CountryUnited States
CityBoston, MA
Period4/23/124/26/12

Keywords

  • Heterojunction bipolar transistor
  • Indium phosphide
  • Nonlinearity

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Xu, H., Iverson, E., Cheng, K. Y., Stuenkel, M., & Feng, M. (2012). Non-linearity characterization of submicron Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs. In 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 (2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012).