Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control

Cory D. Cress, Scott W. Schmucker, Adam L. Friedman, Pratibha Dev, James C. Culbertson, Joseph W Lyding, Jeremy T. Robinson

Research output: Contribution to journalArticle

Abstract

We investigate hyperthermal ion implantation (HyTII) as a means for substitutionally doping layered materials such as graphene. In particular, this systematic study characterizes the efficacy of substitutional N-doping of graphene using HyTII over an N+ energy range of 25-100 eV. Scanning tunneling microscopy results establish the incorporation of N substituents into the graphene lattice during HyTII processing. We illustrate the differences in evolution of the characteristic Raman peaks following incremental doses of N+. We use the ratios of the integrated D and D′ peaks, I(D)/I(D′) to assess the N+ energy-dependent doping efficacy, which shows a strong correlation with previously reported molecular dynamics (MD) simulation results and a peak doping efficiency regime ranging between approximately 30 and 50 eV. We also demonstrate the inherent monolayer depth control of the HyTII process, thereby establishing a unique advantage over other less-specific methods for doping. We achieve this by implementing twisted bilayer graphene (TBG), with one layer of isotopically enriched 13C and one layer of natural 12C graphene, and modify only the top layer of the TBG sample. By assessing the effects of N-HyTII processing, we uncover dose-dependent shifts in the transfer characteristics consistent with electron doping and we find dose-dependent electronic localization that manifests in low-temperature magnetotransport measurements.

Original languageEnglish (US)
Pages (from-to)3714-3722
Number of pages9
JournalACS Nano
Volume10
Issue number3
DOIs
StatePublished - Mar 22 2016

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Graphite
Ion implantation
Graphene
ion implantation
graphene
Nitrogen
Doping (additives)
nitrogen
dosage
doping (materials)
Galvanomagnetic effects
Scanning tunneling microscopy
Processing
temperature measurement
Molecular dynamics
scanning tunneling microscopy
Monolayers
molecular dynamics
energy
Electrons

Keywords

  • N-graphene
  • Raman
  • graphene
  • hyperthermal ion implantation (HyTII)
  • nitrogen doping
  • twisted bilayer graphene (TBG)

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Cress, C. D., Schmucker, S. W., Friedman, A. L., Dev, P., Culbertson, J. C., Lyding, J. W., & Robinson, J. T. (2016). Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control. ACS Nano, 10(3), 3714-3722. https://doi.org/10.1021/acsnano.6b00252

Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control. / Cress, Cory D.; Schmucker, Scott W.; Friedman, Adam L.; Dev, Pratibha; Culbertson, James C.; Lyding, Joseph W; Robinson, Jeremy T.

In: ACS Nano, Vol. 10, No. 3, 22.03.2016, p. 3714-3722.

Research output: Contribution to journalArticle

Cress, CD, Schmucker, SW, Friedman, AL, Dev, P, Culbertson, JC, Lyding, JW & Robinson, JT 2016, 'Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control', ACS Nano, vol. 10, no. 3, pp. 3714-3722. https://doi.org/10.1021/acsnano.6b00252
Cress, Cory D. ; Schmucker, Scott W. ; Friedman, Adam L. ; Dev, Pratibha ; Culbertson, James C. ; Lyding, Joseph W ; Robinson, Jeremy T. / Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control. In: ACS Nano. 2016 ; Vol. 10, No. 3. pp. 3714-3722.
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