Nitrogen doped chalcopyrites as contacts to CdTe photovoltaics

T. Erickson, Angus Rockett, Z. Wang, K. Aryal, S. Marsillac, P. Koirala, R. W. Collins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CuInSe2 (CIS) thin films have been shown to have extremely wide variability in resistivity, over 4 orders of magnitude. Highly conductive CIS offers many potential uses, including as a stable Cu-containing back contact for CdTe, or as a potential material for tunnel junctions in CIS devices. In an attempt to produce consistent, highly conductive, thin CIS films we introduced N 2 during the deposition process as well as implanting films with N separately. We were able to produce highly conductive films with the addition of N to the films. The change in electrical properties was not consistent when to N 2 gas was added during film growth.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2404-2406
Number of pages3
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period6/8/146/13/14

Keywords

  • CdTe photovoltaics
  • Cu(In,Ga)Se2
  • doping
  • ohmic contacts

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Nitrogen doped chalcopyrites as contacts to CdTe photovoltaics'. Together they form a unique fingerprint.

Cite this