Nitrogen doped chalcopyrites as contacts to CdTe photovoltaics

Angus Rockett, T. Erickson, Z. Wang, K. Aryal, S. Marsillac, P. Koirala, R. W. Collins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CuInSe2, CuGaSe2, and alloys thereof produced by a hybrid sputtering and evaporation method show evidence of being dopable with nitrogen by the replacement of some of the Ar sputtering gas with N2. This results in a decrease in resistivity of the films with increasing N 2 pressure in the sputtering gas. No doping of AgInSe2 or CuAlSe2 has been observed to date following similar methods of deposition. The films are now being tested as back contacts to CdTe solar cells. To date only high resistance contacts have been obtained but more testing and improved CdTe cleaning techniques are required to obtain optimized contacts. The doped chalcopyrites represent potential materials for tunnel junctions for use in CIGS photovoltaics and other devices.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1658-1661
Number of pages4
ISBN (Print)9781479932993
DOIs
StatePublished - Jan 1 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Keywords

  • CdTe photovoltaics
  • Doping
  • Ohmic contacts

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

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