New approach to hot electron effects in Si-MOSFETs based on an evolutionary algorithm using a Monte Carlo like mutation operator

J. Jakumeit, U. Ravaioli, K. Hess

Research output: Contribution to journalArticlepeer-review

Abstract

We introduce a new approach to hot electron effects in Si-MOSFETs, based on a mixture of evolutionary optimization algorithms and Monte Carlo technique. The Evolutionary Algorithm searchs for electron distributions which fit a given goal, for example a measured substrate current and in this way can calculate backwards electron distributions from measurement results. The search of the Evolutionary Algorithm is directed toward physically correct distributions by help of a Monte Carlo like mutation operator. Results for bulk-Si demonstrate the correctness of the physical model in the Monte Carlo like mutation operator and the backward calculation ability of the Evolutionary Algorithm. First results for Si-MOSFETs are qualitatively comparable to results of a Full Band Monte Carlo simulation.

Original languageEnglish (US)
Pages (from-to)307-311
Number of pages5
JournalVLSI Design
Volume6
Issue number1-4
DOIs
StatePublished - 1998

Keywords

  • Evolutionary algorithm
  • Genetic algorithm
  • Hot electrons
  • Monte-Carlo
  • Silicon
  • Simulation

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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