Abstract
We introduce a new approach to hot electron effects in Si-MOSFETs, based on a mixture of evolutionary optimization algorithms and Monte Carlo technique. The Evolutionary Algorithm searchs for electron distributions which fit a given goal, for example a measured substrate current and in this way can calculate backwards electron distributions from measurement results. The search of the Evolutionary Algorithm is directed toward physically correct distributions by help of a Monte Carlo like mutation operator. Results for bulk-Si demonstrate the correctness of the physical model in the Monte Carlo like mutation operator and the backward calculation ability of the Evolutionary Algorithm. First results for Si-MOSFETs are qualitatively comparable to results of a Full Band Monte Carlo simulation.
Original language | English (US) |
---|---|
Pages (from-to) | 307-311 |
Number of pages | 5 |
Journal | VLSI Design |
Volume | 6 |
Issue number | 1-4 |
DOIs | |
State | Published - 1998 |
Keywords
- Evolutionary algorithm
- Genetic algorithm
- Hot electrons
- Monte-Carlo
- Silicon
- Simulation
ASJC Scopus subject areas
- Hardware and Architecture
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering