Abstract
A new algorithm is implemented into iETSIM to evaluate the transient device temperature. The simulator can be used to perform the electrothermal simulation under arbitrary input waveforms. Thus, the circuit protection level under real ESD stress can be studied.
Original language | English (US) |
---|---|
Pages | 130-131 |
Number of pages | 2 |
State | Published - 1997 |
Event | Proceedings of the 1997 IEEE International Integrated Reliability Workshop - Tahoe, CA, USA Duration: Oct 13 1997 → Oct 16 1997 |
Other
Other | Proceedings of the 1997 IEEE International Integrated Reliability Workshop |
---|---|
City | Tahoe, CA, USA |
Period | 10/13/97 → 10/16/97 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering