New algorithm for circuit-level electrothermal simulation under EOS/ESD stress

Tong Li, C. H. Tsai, Y. J. Huh, Elyse Rosenbaum, S. M. Kang

Research output: Contribution to conferencePaper

Abstract

A new algorithm is implemented into iETSIM to evaluate the transient device temperature. The simulator can be used to perform the electrothermal simulation under arbitrary input waveforms. Thus, the circuit protection level under real ESD stress can be studied.

Original languageEnglish (US)
Pages130-131
Number of pages2
StatePublished - Dec 1 1997
EventProceedings of the 1997 IEEE International Integrated Reliability Workshop - Tahoe, CA, USA
Duration: Oct 13 1997Oct 16 1997

Other

OtherProceedings of the 1997 IEEE International Integrated Reliability Workshop
CityTahoe, CA, USA
Period10/13/9710/16/97

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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  • Cite this

    Li, T., Tsai, C. H., Huh, Y. J., Rosenbaum, E., & Kang, S. M. (1997). New algorithm for circuit-level electrothermal simulation under EOS/ESD stress. 130-131. Paper presented at Proceedings of the 1997 IEEE International Integrated Reliability Workshop, Tahoe, CA, USA, .