Nearly noise-free transistor operated in the 2-18 GHz range

J. A. Fendrich, M. Feng

Research output: Contribution to journalArticlepeer-review


Temperature dependent measurements of the noise parameters of a pseudomorphic high electron mobility transistor show the minimum noise figure vanishes at low temperatures for frequencies from 2 GHz up to 18 GHz and for most currents. We propose that the exponential decrease seen in the noise figure with temperature is due to a reduction of thermally activated noise sources with an activation energy of ∼95 meV. Other noise-parameter data suggest a flattening of the noise figure paraboloid as temperature is decreased. These results demonstrate the feasibility of designing a near 0.1 dB noise figure amplifier for high-frequency operation over a wide range of currents.

Original languageEnglish (US)
Pages (from-to)368-370
Number of pages3
JournalApplied Physics Letters
Issue number3
StatePublished - 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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