CIGS epilayers with different orientations and similar chemical compositions were grown on GaAs substrates. The resultant epilayers reveal similar surface and subsurface electronic properties. Band gap energies were found to be consistent with predictions for the specific stoichiometries studied.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Nov 2002|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering