Near-surface electronic defects and morphology of Culn1-xGaxSe2

Y. M. Strzhemechny; P. E. Smith; S. T. Bradley; D. X. Liao; A. A. Rockett; K. Ramanathan; L. J. Brillson

doi:10.1116/1.1526357

Near-surface electronic defects and morphology of Culn_1-xGa_xSe₂

Y. M. Strzhemechny, P. E. Smith, S. T. Bradley, D. X. Liao, A. A. Rockett, K. Ramanathan, L. J. Brillson

Research output: Contribution to journal › Article › peer-review

Abstract

CIGS epilayers with different orientations and similar chemical compositions were grown on GaAs substrates. The resultant epilayers reveal similar surface and subsurface electronic properties. Band gap energies were found to be consistent with predictions for the specific stoichiometries studied.

Original language	English (US)
Pages (from-to)	2441-2448
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1526357
State	Published - Nov 2002
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1526357

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Cite this

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title = "Near-surface electronic defects and morphology of Culn1-xGaxSe2",

abstract = "CIGS epilayers with different orientations and similar chemical compositions were grown on GaAs substrates. The resultant epilayers reveal similar surface and subsurface electronic properties. Band gap energies were found to be consistent with predictions for the specific stoichiometries studied.",

author = "Strzhemechny, {Y. M.} and Smith, {P. E.} and Bradley, {S. T.} and Liao, {D. X.} and Rockett, {A. A.} and K. Ramanathan and Brillson, {L. J.}",

year = "2002",

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AU - Strzhemechny, Y. M.

AU - Smith, P. E.

AU - Bradley, S. T.

AU - Liao, D. X.

AU - Rockett, A. A.

AU - Ramanathan, K.

AU - Brillson, L. J.

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AB - CIGS epilayers with different orientations and similar chemical compositions were grown on GaAs substrates. The resultant epilayers reveal similar surface and subsurface electronic properties. Band gap energies were found to be consistent with predictions for the specific stoichiometries studied.

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