Near-surface electronic defects and morphology of Culn1-xGaxSe2

Y. M. Strzhemechny, P. E. Smith, S. T. Bradley, D. X. Liao, A. A. Rockett, K. Ramanathan, L. J. Brillson

Research output: Contribution to journalArticlepeer-review


CIGS epilayers with different orientations and similar chemical compositions were grown on GaAs substrates. The resultant epilayers reveal similar surface and subsurface electronic properties. Band gap energies were found to be consistent with predictions for the specific stoichiometries studied.

Original languageEnglish (US)
Pages (from-to)2441-2448
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
StatePublished - Nov 2002
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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