Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy

Jeongyong Kim, Kevan Samiee, Jeffrey O. White, Jae Min Myoung, Kyekyoon Kim

Research output: Contribution to journalArticlepeer-review


The spatial and spectral distribution of photoluminescence from InGaN films grown by plasma-assisted molecular-beam epitaxy are studied by near-field scanning optical microscopy. The luminescence intensity is low in the vicinity of pits in the surface that are believed to be associated with dislocations. For 20% In, the emission is random on a submicron length scale, but clumps into micron-sized regions at 27% In. The clustering is quantified by calculating the image entropy. Near-field spectra indicate that the regions of high intensity are not due to a local increase in In. Spatial variations in the luminescence wavelength indicate that composition fluctuations are enhanced with increasing In.

Original languageEnglish (US)
Pages (from-to)989-991
Number of pages3
JournalApplied Physics Letters
Issue number6
StatePublished - Feb 11 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy'. Together they form a unique fingerprint.

Cite this