NbAl3/Al microlaminated thin films deposited by UV laser ablation

H. L. Chung; M. H. Jilavi; T. P. Duffey; M. A. Shannon; W. M. Kriven; J. Mazumder

doi:10.1016/S0040-6090(01)00833-1

NbAl₃/Al microlaminated thin films deposited by UV laser ablation

H. L. Chung, M. H. Jilavi, T. P. Duffey, M. A. Shannon, W. M. Kriven, J. Mazumder

Research output: Contribution to journal › Article › peer-review

Abstract

NbAl₃/Al microlaminated multilayer thin films were obtained by a laser ablation deposition method, using a KrF excimer laser (λ = 248 nm) at a fluence of 7.6 J/cm². Films were deposited on Si substrates cooled during deposition by liquid nitrogen flow in order to minimize crystal growth and interdiffusion between NbAl₃ and Al layers. A helium gas flow to the middle portion of substrate and target was maintained at varying ambient pressure conditions (0, 100, 200 mtorr). Microstructures of the films produced were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning transmission electron microscopy (STEM). With no helium backpressure, films exhibited an amorphous structure, but with increasing He pressure, the crystallinity of the films increased. TEM investigations determined the average aluminum crystal size to be approximately 30 nm, and each layer thickness to be 80 nm. STEM/EDS (electron dispersive spectroscopy) analysis showed no significant interdiffusion between NbAl₃ and Al layers.

Original language	English (US)
Pages (from-to)	101-106
Number of pages	6
Journal	Thin Solid Films
Volume	388
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(01)00833-1
State	Published - Jun 1 2001

Keywords

Laser ablation
Multilayers
Nanostructures
Transmission electron microscopy (TEM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Online availability

10.1016/S0040-6090(01)00833-1

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Cite this

@article{5ab608595d884236bab0613f33e28178,

title = "NbAl3/Al microlaminated thin films deposited by UV laser ablation",

abstract = "NbAl3/Al microlaminated multilayer thin films were obtained by a laser ablation deposition method, using a KrF excimer laser (λ = 248 nm) at a fluence of 7.6 J/cm2. Films were deposited on Si substrates cooled during deposition by liquid nitrogen flow in order to minimize crystal growth and interdiffusion between NbAl3 and Al layers. A helium gas flow to the middle portion of substrate and target was maintained at varying ambient pressure conditions (0, 100, 200 mtorr). Microstructures of the films produced were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning transmission electron microscopy (STEM). With no helium backpressure, films exhibited an amorphous structure, but with increasing He pressure, the crystallinity of the films increased. TEM investigations determined the average aluminum crystal size to be approximately 30 nm, and each layer thickness to be 80 nm. STEM/EDS (electron dispersive spectroscopy) analysis showed no significant interdiffusion between NbAl3 and Al layers.",

keywords = "Laser ablation, Multilayers, Nanostructures, Transmission electron microscopy (TEM)",

author = "Chung, {H. L.} and Jilavi, {M. H.} and Duffey, {T. P.} and Shannon, {M. A.} and Kriven, {W. M.} and J. Mazumder",

note = "Funding Information: H. Chung and J. Mazumder acknowledge the support of the AFOSR under grant #F 49620-92-J-0142. M.H. Jilavi and W.M. Kriven acknowledge the support of the AFOSR under grant #F 49620-93-1-0227. H. Chung and M.A. Shannon acknowledge the support from NSF Career grant number CTS-97-03402.",

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language = "English (US)",

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AU - Chung, H. L.

AU - Jilavi, M. H.

AU - Duffey, T. P.

AU - Shannon, M. A.

AU - Kriven, W. M.

AU - Mazumder, J.

N1 - Funding Information: H. Chung and J. Mazumder acknowledge the support of the AFOSR under grant #F 49620-92-J-0142. M.H. Jilavi and W.M. Kriven acknowledge the support of the AFOSR under grant #F 49620-93-1-0227. H. Chung and M.A. Shannon acknowledge the support from NSF Career grant number CTS-97-03402.

PY - 2001/6/1

Y1 - 2001/6/1

N2 - NbAl3/Al microlaminated multilayer thin films were obtained by a laser ablation deposition method, using a KrF excimer laser (λ = 248 nm) at a fluence of 7.6 J/cm2. Films were deposited on Si substrates cooled during deposition by liquid nitrogen flow in order to minimize crystal growth and interdiffusion between NbAl3 and Al layers. A helium gas flow to the middle portion of substrate and target was maintained at varying ambient pressure conditions (0, 100, 200 mtorr). Microstructures of the films produced were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning transmission electron microscopy (STEM). With no helium backpressure, films exhibited an amorphous structure, but with increasing He pressure, the crystallinity of the films increased. TEM investigations determined the average aluminum crystal size to be approximately 30 nm, and each layer thickness to be 80 nm. STEM/EDS (electron dispersive spectroscopy) analysis showed no significant interdiffusion between NbAl3 and Al layers.

AB - NbAl3/Al microlaminated multilayer thin films were obtained by a laser ablation deposition method, using a KrF excimer laser (λ = 248 nm) at a fluence of 7.6 J/cm2. Films were deposited on Si substrates cooled during deposition by liquid nitrogen flow in order to minimize crystal growth and interdiffusion between NbAl3 and Al layers. A helium gas flow to the middle portion of substrate and target was maintained at varying ambient pressure conditions (0, 100, 200 mtorr). Microstructures of the films produced were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning transmission electron microscopy (STEM). With no helium backpressure, films exhibited an amorphous structure, but with increasing He pressure, the crystallinity of the films increased. TEM investigations determined the average aluminum crystal size to be approximately 30 nm, and each layer thickness to be 80 nm. STEM/EDS (electron dispersive spectroscopy) analysis showed no significant interdiffusion between NbAl3 and Al layers.

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