Native-oxide stripe-geometry In0.5(AlxGa 1-x)0.5P-In0.5Ga0.5P heterostructure laser diodes

F. A. Kish, S. J. Caracci, N. Holonyak, J. M. Dallesasse, A. R. Sugg, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, M. G. Craford

Research output: Contribution to journalArticlepeer-review

Abstract

Data are presented demonstrating the formation of stable, device-quality native oxides from high Al composition In0.5(AlxGa 1-x)0.5P (x ∼0.9) via reaction with H2O vapor (in N2 carrier gas) at elevated temperatures (≥500°C). The oxide exhibits excellent current-blocking characteristics and is employed to fabricate continuous room-temperature stripe-geometry In0.5(Al xGa1-x)0.5P-In0.5Ga0.5P double-heterostructure laser diodes.

Original languageEnglish (US)
Pages (from-to)354-356
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number3
DOIs
StatePublished - Dec 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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