Native-oxide stripe-geometry In0.5(AlxGa 1-x)0.5P-In0.5Ga0.5P heterostructure laser diodes

F. A. Kish; S. J. Caracci; N. Holonyak; J. M. Dallesasse; A. R. Sugg; R. M. Fletcher; C. P. Kuo; T. D. Osentowski; M. G. Craford

doi:10.1063/1.105593

Native-oxide stripe-geometry In_0.5(Al_xGa _1-x)_0.5P-In_0.5Ga_0.5P heterostructure laser diodes

F. A. Kish, S. J. Caracci, N. Holonyak, J. M. Dallesasse, A. R. Sugg, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, M. G. Craford

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Abstract

Data are presented demonstrating the formation of stable, device-quality native oxides from high Al composition In_0.5(Al_xGa _1-x)_0.5P (x ∼0.9) via reaction with H₂O vapor (in N₂ carrier gas) at elevated temperatures (≥500°C). The oxide exhibits excellent current-blocking characteristics and is employed to fabricate continuous room-temperature stripe-geometry In_0.5(Al _xGa_1-x)_0.5P-In_0.5Ga_0.5P double-heterostructure laser diodes.

Original language	English (US)
Pages (from-to)	354-356
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	3
DOIs	https://doi.org/10.1063/1.105593
State	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.105593

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Cite this

@article{e1062ce62a96486c9fd4982ba55efa0c,

title = "Native-oxide stripe-geometry In0.5(AlxGa 1-x)0.5P-In0.5Ga0.5P heterostructure laser diodes",

abstract = "Data are presented demonstrating the formation of stable, device-quality native oxides from high Al composition In0.5(AlxGa 1-x)0.5P (x ∼0.9) via reaction with H2O vapor (in N2 carrier gas) at elevated temperatures (≥500°C). The oxide exhibits excellent current-blocking characteristics and is employed to fabricate continuous room-temperature stripe-geometry In0.5(Al xGa1-x)0.5P-In0.5Ga0.5P double-heterostructure laser diodes.",

author = "Kish, {F. A.} and Caracci, {S. J.} and N. Holonyak and Dallesasse, {J. M.} and Sugg, {A. R.} and Fletcher, {R. M.} and Kuo, {C. P.} and Osentowski, {T. D.} and Craford, {M. G.}",

year = "1991",

doi = "10.1063/1.105593",

language = "English (US)",

volume = "59",

pages = "354--356",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Native-oxide stripe-geometry In0.5(AlxGa 1-x)0.5P-In0.5Ga0.5P heterostructure laser diodes

AU - Kish, F. A.

AU - Caracci, S. J.

AU - Holonyak, N.

AU - Dallesasse, J. M.

AU - Sugg, A. R.

AU - Fletcher, R. M.

AU - Kuo, C. P.

AU - Osentowski, T. D.

AU - Craford, M. G.

PY - 1991

Y1 - 1991

N2 - Data are presented demonstrating the formation of stable, device-quality native oxides from high Al composition In0.5(AlxGa 1-x)0.5P (x ∼0.9) via reaction with H2O vapor (in N2 carrier gas) at elevated temperatures (≥500°C). The oxide exhibits excellent current-blocking characteristics and is employed to fabricate continuous room-temperature stripe-geometry In0.5(Al xGa1-x)0.5P-In0.5Ga0.5P double-heterostructure laser diodes.

AB - Data are presented demonstrating the formation of stable, device-quality native oxides from high Al composition In0.5(AlxGa 1-x)0.5P (x ∼0.9) via reaction with H2O vapor (in N2 carrier gas) at elevated temperatures (≥500°C). The oxide exhibits excellent current-blocking characteristics and is employed to fabricate continuous room-temperature stripe-geometry In0.5(Al xGa1-x)0.5P-In0.5Ga0.5P double-heterostructure laser diodes.

UR - http://www.scopus.com/inward/record.url?scp=0042019439&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042019439&partnerID=8YFLogxK

U2 - 10.1063/1.105593

DO - 10.1063/1.105593

M3 - Article

AN - SCOPUS:0042019439

SN - 0003-6951

VL - 59

SP - 354

EP - 356

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -