Native-oxide stripe-geometry AlxGa1-xAs-GaAs quantum well heterostructure lasers

J. M. Dallesasse; N. Holonyak

doi:10.1063/1.104645

Native-oxide stripe-geometry Al_xGa_1-xAs-GaAs quantum well heterostructure lasers

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Abstract

Data are presented on the room-temperature continuous (cw) operation of native-oxide single-stripe Al_xGa_1-xAs-GaAs quantum well heterostructure (QWH) lasers. The device quality native oxide is produced by the conversion of high Al composition Al_xGa_1-xAs (x∼0.8) confining layers via H₂O vapor oxidation (400 °C) in a N ₂ carrier gas. The 10-μm-wide cw 300 K QWH lasers, which are fabricated by simplified processing, have excellent spectral quality and have been operated to powers in excess of 100 mW per facet.

Original language	English (US)
Pages (from-to)	394-396
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	4
DOIs	https://doi.org/10.1063/1.104645
State	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Data are presented on the room-temperature continuous (cw) operation of native-oxide single-stripe AlxGa1-xAs-GaAs quantum well heterostructure (QWH) lasers. The device quality native oxide is produced by the conversion of high Al composition AlxGa1-xAs (x∼0.8) confining layers via H2O vapor oxidation (400 °C) in a N 2 carrier gas. The 10-μm-wide cw 300 K QWH lasers, which are fabricated by simplified processing, have excellent spectral quality and have been operated to powers in excess of 100 mW per facet.",

author = "Dallesasse, {J. M.} and N. Holonyak",

year = "1991",

doi = "10.1063/1.104645",

language = "English (US)",

volume = "58",

pages = "394--396",

journal = "Applied Physics Letters",

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AB - Data are presented on the room-temperature continuous (cw) operation of native-oxide single-stripe AlxGa1-xAs-GaAs quantum well heterostructure (QWH) lasers. The device quality native oxide is produced by the conversion of high Al composition AlxGa1-xAs (x∼0.8) confining layers via H2O vapor oxidation (400 °C) in a N 2 carrier gas. The 10-μm-wide cw 300 K QWH lasers, which are fabricated by simplified processing, have excellent spectral quality and have been operated to powers in excess of 100 mW per facet.

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