Native oxide stabilization of AlAs-GaAs heterostructures

A. R. Sugg; N. Holonyak; J. E. Baker; F. A. Kish; J. M. Dallesasse

doi:10.1063/1.105213

Native oxide stabilization of AlAs-GaAs heterostructures

A. R. Sugg, N. Holonyak, J. E. Baker, F. A. Kish, J. M. Dallesasse

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Abstract

Data are presented on the stabilization of AlAs-GaAs heterostructures against atmospheric (destructive) hydrolysis using the native oxide that can be formed (N₂+H₂O, 400°C, 3 h) on the AlAs layer. The ∼0.1-μm-thick native oxide formed from the AlAs layer is shown to be stable with aging (∼100 days), while unoxidized samples degrade through the AlAs (0.1 μm) down into the GaAs as deep as ∼1 μm. Relative to oxides formed (∼25°C) on AlAs (or Al_xGa_1-xAs, x ≳ 0.7) under atmospheric conditions (hydrolysis), oxides formed (via N₂ +H₂O) at higher temperatures (≳400°C) are much more stable and seal the underlying crystal (e.g., GaAs).

Original language	English (US)
Pages (from-to)	1199-1201
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	11
DOIs	https://doi.org/10.1063/1.105213
State	Published - 1991

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Physics and Astronomy (miscellaneous)

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10.1063/1.105213

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title = "Native oxide stabilization of AlAs-GaAs heterostructures",

abstract = "Data are presented on the stabilization of AlAs-GaAs heterostructures against atmospheric (destructive) hydrolysis using the native oxide that can be formed (N2+H2O, 400°C, 3 h) on the AlAs layer. The ∼0.1-μm-thick native oxide formed from the AlAs layer is shown to be stable with aging (∼100 days), while unoxidized samples degrade through the AlAs (0.1 μm) down into the GaAs as deep as ∼1 μm. Relative to oxides formed (∼25°C) on AlAs (or AlxGa1-xAs, x ≳ 0.7) under atmospheric conditions (hydrolysis), oxides formed (via N2 +H2O) at higher temperatures (≳400°C) are much more stable and seal the underlying crystal (e.g., GaAs).",

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T1 - Native oxide stabilization of AlAs-GaAs heterostructures

AU - Sugg, A. R.

AU - Holonyak, N.

AU - Baker, J. E.

AU - Kish, F. A.

AU - Dallesasse, J. M.

PY - 1991

Y1 - 1991

N2 - Data are presented on the stabilization of AlAs-GaAs heterostructures against atmospheric (destructive) hydrolysis using the native oxide that can be formed (N2+H2O, 400°C, 3 h) on the AlAs layer. The ∼0.1-μm-thick native oxide formed from the AlAs layer is shown to be stable with aging (∼100 days), while unoxidized samples degrade through the AlAs (0.1 μm) down into the GaAs as deep as ∼1 μm. Relative to oxides formed (∼25°C) on AlAs (or AlxGa1-xAs, x ≳ 0.7) under atmospheric conditions (hydrolysis), oxides formed (via N2 +H2O) at higher temperatures (≳400°C) are much more stable and seal the underlying crystal (e.g., GaAs).

AB - Data are presented on the stabilization of AlAs-GaAs heterostructures against atmospheric (destructive) hydrolysis using the native oxide that can be formed (N2+H2O, 400°C, 3 h) on the AlAs layer. The ∼0.1-μm-thick native oxide formed from the AlAs layer is shown to be stable with aging (∼100 days), while unoxidized samples degrade through the AlAs (0.1 μm) down into the GaAs as deep as ∼1 μm. Relative to oxides formed (∼25°C) on AlAs (or AlxGa1-xAs, x ≳ 0.7) under atmospheric conditions (hydrolysis), oxides formed (via N2 +H2O) at higher temperatures (≳400°C) are much more stable and seal the underlying crystal (e.g., GaAs).

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Native oxide stabilization of AlAs-GaAs heterostructures

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