Native oxide stabilization of AlAs-GaAs heterostructures

A. R. Sugg, N. Holonyak, J. E. Baker, F. A. Kish, J. M. Dallesasse

Research output: Contribution to journalArticlepeer-review

Abstract

Data are presented on the stabilization of AlAs-GaAs heterostructures against atmospheric (destructive) hydrolysis using the native oxide that can be formed (N2+H2O, 400°C, 3 h) on the AlAs layer. The ∼0.1-μm-thick native oxide formed from the AlAs layer is shown to be stable with aging (∼100 days), while unoxidized samples degrade through the AlAs (0.1 μm) down into the GaAs as deep as ∼1 μm. Relative to oxides formed (∼25°C) on AlAs (or AlxGa1-xAs, x ≳ 0.7) under atmospheric conditions (hydrolysis), oxides formed (via N2 +H2O) at higher temperatures (≳400°C) are much more stable and seal the underlying crystal (e.g., GaAs).

Original languageEnglish (US)
Pages (from-to)1199-1201
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number11
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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