Native Oxide Of An Aluminum-bearing Group III-V Semiconductor

Nick Holonyak; John Michael Dallesasse

Native Oxide Of An Aluminum-bearing Group III-V Semiconductor

Nick Holonyak (Inventor), John Michael Dallesasse (Inventor)

Research output: Patent

Abstract

A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

Original language	English (US)
U.S. patent number	5567980
Filing date	1/26/95
State	Published - Oct 22 1996

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@misc{1861445d49ae461593648b985522de39,

title = "Native Oxide Of An Aluminum-bearing Group III-V Semiconductor",

abstract = "A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.",

author = "Nick Holonyak and Dallesasse, {John Michael}",

note = "This invention was made, in part, with Government support under contract DAAL 03 89-K-0008 awarded by the United States Army and Grants NSF ECD 89-43166 and NSF DMR 89-20538 awarded by the National Science Foundation. The Government has certain rights in the invention. This application is a continuation-in-part of U.S. patent application Ser. No. 636,313 filed Dec. 31, 1990.; 5567980",

year = "1996",

month = oct,

day = "22",

language = "English (US)",

type = "Patent",

}

TY - PAT

T1 - Native Oxide Of An Aluminum-bearing Group III-V Semiconductor

AU - Holonyak, Nick

AU - Dallesasse, John Michael

N1 - This invention was made, in part, with Government support under contract DAAL 03 89-K-0008 awarded by the United States Army and Grants NSF ECD 89-43166 and NSF DMR 89-20538 awarded by the National Science Foundation. The Government has certain rights in the invention. This application is a continuation-in-part of U.S. patent application Ser. No. 636,313 filed Dec. 31, 1990.

PY - 1996/10/22

Y1 - 1996/10/22

N2 - A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

AB - A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

M3 - Patent

M1 - 5567980

Y2 - 1995/01/26

ER -

Native Oxide Of An Aluminum-bearing Group III-V Semiconductor

Abstract

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