Native-oxide-masked Si impurity-induced layer disordering of Al xGa1-xAs-AlyGa1-yAs-Al zGa1-zAs quantum-well heterostructures

N. El-Zein; N. Holonyak; F. A. Kish; A. R. Sugg; T. A. Richard; J. M. Dallesasse; S. C. Smith; R. D. Burnham

doi:10.1063/1.350354

Native-oxide-masked Si impurity-induced layer disordering of Al _xGa_1-xAs-Al_yGa_1-yAs-Al _zGa_1-zAs quantum-well heterostructures

N. El-Zein, N. Holonyak, F. A. Kish, A. R. Sugg, T. A. Richard, J. M. Dallesasse, S. C. Smith, R. D. Burnham

Research output: Contribution to journal › Article › peer-review

Abstract

Data are presented showing that the native oxide that can be formed on high Al composition Al_xGa_1-xAs (x≳0.7) confining layers commonly employed on Al_xGa_1-xAs-Al_yGa _1-yAs-Al_zGa_1-zAs (y≳z) superlattices or quantum-well heterostructures serves as an effective mask against Si diffusion, and thus impurity-induced layer disordering. The high-quality native oxide is produced by the conversion of high-composition Al_xGa_1-xAs (x≳0.7) confining layers via H₂O vapor oxidation (≳400°C) in N₂ carrier gas.

Original language	English (US)
Pages (from-to)	2031-2034
Number of pages	4
Journal	Journal of Applied Physics
Volume	70
Issue number	4
DOIs	https://doi.org/10.1063/1.350354
State	Published - 1991

ASJC Scopus subject areas

General Physics and Astronomy

Online availability

10.1063/1.350354

Library availability

Discover UIUC Full Text

Cite this

@article{1aa4834debc64f39a6149de322823122,

title = "Native-oxide-masked Si impurity-induced layer disordering of Al xGa1-xAs-AlyGa1-yAs-Al zGa1-zAs quantum-well heterostructures",

abstract = "Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1-xAs (x≳0.7) confining layers commonly employed on AlxGa1-xAs-AlyGa 1-yAs-AlzGa1-zAs (y≳z) superlattices or quantum-well heterostructures serves as an effective mask against Si diffusion, and thus impurity-induced layer disordering. The high-quality native oxide is produced by the conversion of high-composition AlxGa1-xAs (x≳0.7) confining layers via H2O vapor oxidation (≳400°C) in N2 carrier gas.",

author = "N. El-Zein and N. Holonyak and Kish, {F. A.} and Sugg, {A. R.} and Richard, {T. A.} and Dallesasse, {J. M.} and Smith, {S. C.} and Burnham, {R. D.}",

year = "1991",

doi = "10.1063/1.350354",

language = "English (US)",

volume = "70",

pages = "2031--2034",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Native-oxide-masked Si impurity-induced layer disordering of Al xGa1-xAs-AlyGa1-yAs-Al zGa1-zAs quantum-well heterostructures

AU - El-Zein, N.

AU - Holonyak, N.

AU - Kish, F. A.

AU - Sugg, A. R.

AU - Richard, T. A.

AU - Dallesasse, J. M.

AU - Smith, S. C.

AU - Burnham, R. D.

PY - 1991

Y1 - 1991

N2 - Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1-xAs (x≳0.7) confining layers commonly employed on AlxGa1-xAs-AlyGa 1-yAs-AlzGa1-zAs (y≳z) superlattices or quantum-well heterostructures serves as an effective mask against Si diffusion, and thus impurity-induced layer disordering. The high-quality native oxide is produced by the conversion of high-composition AlxGa1-xAs (x≳0.7) confining layers via H2O vapor oxidation (≳400°C) in N2 carrier gas.

AB - Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1-xAs (x≳0.7) confining layers commonly employed on AlxGa1-xAs-AlyGa 1-yAs-AlzGa1-zAs (y≳z) superlattices or quantum-well heterostructures serves as an effective mask against Si diffusion, and thus impurity-induced layer disordering. The high-quality native oxide is produced by the conversion of high-composition AlxGa1-xAs (x≳0.7) confining layers via H2O vapor oxidation (≳400°C) in N2 carrier gas.

UR - http://www.scopus.com/inward/record.url?scp=4243137786&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4243137786&partnerID=8YFLogxK

U2 - 10.1063/1.350354

DO - 10.1063/1.350354

M3 - Article

AN - SCOPUS:4243137786

SN - 0021-8979

VL - 70

SP - 2031

EP - 2034

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -