Native-oxide-masked Si impurity-induced layer disordering of Al xGa1-xAs-AlyGa1-yAs-Al zGa1-zAs quantum-well heterostructures

N. El-Zein, N. Holonyak, F. A. Kish, A. R. Sugg, T. A. Richard, J. M. Dallesasse, S. C. Smith, R. D. Burnham

Research output: Contribution to journalArticlepeer-review

Abstract

Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1-xAs (x≳0.7) confining layers commonly employed on AlxGa1-xAs-AlyGa 1-yAs-AlzGa1-zAs (y≳z) superlattices or quantum-well heterostructures serves as an effective mask against Si diffusion, and thus impurity-induced layer disordering. The high-quality native oxide is produced by the conversion of high-composition AlxGa1-xAs (x≳0.7) confining layers via H2O vapor oxidation (≳400°C) in N2 carrier gas.

Original languageEnglish (US)
Pages (from-to)2031-2034
Number of pages4
JournalJournal of Applied Physics
Volume70
Issue number4
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Native-oxide-masked Si impurity-induced layer disordering of Al <sub>x</sub>Ga<sub>1-x</sub>As-Al<sub>y</sub>Ga<sub>1-y</sub>As-Al <sub>z</sub>Ga<sub>1-z</sub>As quantum-well heterostructures'. Together they form a unique fingerprint.

Cite this