Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1-xAs (x≳0.7) confining layers commonly employed on AlxGa1-xAs-AlyGa 1-yAs-AlzGa1-zAs (y≳z) superlattices or quantum-well heterostructures serves as an effective mask against Si diffusion, and thus impurity-induced layer disordering. The high-quality native oxide is produced by the conversion of high-composition AlxGa1-xAs (x≳0.7) confining layers via H2O vapor oxidation (≳400°C) in N2 carrier gas.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Applied Physics|
|State||Published - 1991|
ASJC Scopus subject areas
- Physics and Astronomy(all)