Native-oxide masked impurity-induced layer disordering of Al xGa1-xAs quantum well heterostructures

J. M. Dallesasse, N. Holonyak, N. El-Zein, T. A. Richard, F. A. Kish, A. R. Sugg, R. D. Burnham, S. C. Smith

Research output: Contribution to journalArticlepeer-review

Abstract

Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1-xAs (x≳0.7) confining layers on AlyGa1-yAs-AlzGa1-zAs (y≳z) superlattices or quantum well heterostructures serves as an effective mask against impurity diffusion (Zn or Si), and thus against impurity-induced layer disordering. The high quality native oxide is produced by the conversion of high Al composition AlxGa1-xAs (x≳0.7) confining layers, which can be grown on a variety of heterostructures, via H2O vapor oxidation (≳400°C) in an N2 carrier gas.

Original languageEnglish (US)
Pages (from-to)974-976
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number9
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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