Abstract
Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1-xAs (x≳0.7) confining layers on AlyGa1-yAs-AlzGa1-zAs (y≳z) superlattices or quantum well heterostructures serves as an effective mask against impurity diffusion (Zn or Si), and thus against impurity-induced layer disordering. The high quality native oxide is produced by the conversion of high Al composition AlxGa1-xAs (x≳0.7) confining layers, which can be grown on a variety of heterostructures, via H2O vapor oxidation (≳400°C) in an N2 carrier gas.
Original language | English (US) |
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Pages (from-to) | 974-976 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 58 |
Issue number | 9 |
DOIs | |
State | Published - 1991 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)