Native-oxide defined In0.5(AlxGa1-x) 0.5P quantum well heterostructure window lasers (660 nm)

S. A. Maranowski, F. A. Kish, S. J. Caracci, N. Holonyak, J. M. Dallesasse, D. P. Bour, D. W. Treat

Research output: Contribution to journalArticlepeer-review

Abstract

Data are presented demonstrating In0.5(AlxGa 1-x)0.5P quantum well heterostructure lasers with extended current-blocking windows (∼75 μm/window) that exhibit significant improvements in output power (∼2×) compared to lasers with no windows. The windows and active stripes are defined by the formation of a thin (∼1000 Å, patterned) native oxide via H2O vapor oxidation (550°C) of the high-gap In0.5(AlxGa 1-x)0.5P upper confining layer. Devices operating at ∼660 nm with a 40 μm wide emitting aperture (∼500 μm cavity) and ∼75 μm windows (total window length ∼150 μm) exhibit 300 K continuous output powers ≳130 mW/facet (uncoated) and pulsed output powers ≳575 mW/facet (uncoated). Improvements in output power result from decreased heating at the facets and defocusing of the optical wave in the unpumped window regions.

Original languageEnglish (US)
Pages (from-to)1688-1690
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number14
DOIs
StatePublished - 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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