Native-oxide defined In0.5(AlxGa1-x) 0.5P quantum well heterostructure window lasers (660 nm)

S. A. Maranowski; F. A. Kish; S. J. Caracci; N. Holonyak; J. M. Dallesasse; D. P. Bour; D. W. Treat

doi:10.1063/1.108452

Native-oxide defined In_0.5(Al_xGa_1-x) _0.5P quantum well heterostructure window lasers (660 nm)

S. A. Maranowski, F. A. Kish, S. J. Caracci, N. Holonyak, J. M. Dallesasse, D. P. Bour, D. W. Treat

Research output: Contribution to journal › Article › peer-review

Abstract

Data are presented demonstrating In_0.5(Al_xGa _1-x)_0.5P quantum well heterostructure lasers with extended current-blocking windows (∼75 μm/window) that exhibit significant improvements in output power (∼2×) compared to lasers with no windows. The windows and active stripes are defined by the formation of a thin (∼1000 Å, patterned) native oxide via H₂O vapor oxidation (550°C) of the high-gap In_0.5(Al_xGa _1-x)_0.5P upper confining layer. Devices operating at ∼660 nm with a 40 μm wide emitting aperture (∼500 μm cavity) and ∼75 μm windows (total window length ∼150 μm) exhibit 300 K continuous output powers ≳130 mW/facet (uncoated) and pulsed output powers ≳575 mW/facet (uncoated). Improvements in output power result from decreased heating at the facets and defocusing of the optical wave in the unpumped window regions.

Original language	English (US)
Pages (from-to)	1688-1690
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	14
DOIs	https://doi.org/10.1063/1.108452
State	Published - 1992

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{b5db9daaaaaf42349b26d5b965d882d9,

title = "Native-oxide defined In0.5(AlxGa1-x) 0.5P quantum well heterostructure window lasers (660 nm)",

abstract = "Data are presented demonstrating In0.5(AlxGa 1-x)0.5P quantum well heterostructure lasers with extended current-blocking windows (∼75 μm/window) that exhibit significant improvements in output power (∼2×) compared to lasers with no windows. The windows and active stripes are defined by the formation of a thin (∼1000 {\AA}, patterned) native oxide via H2O vapor oxidation (550°C) of the high-gap In0.5(AlxGa 1-x)0.5P upper confining layer. Devices operating at ∼660 nm with a 40 μm wide emitting aperture (∼500 μm cavity) and ∼75 μm windows (total window length ∼150 μm) exhibit 300 K continuous output powers ≳130 mW/facet (uncoated) and pulsed output powers ≳575 mW/facet (uncoated). Improvements in output power result from decreased heating at the facets and defocusing of the optical wave in the unpumped window regions.",

author = "Maranowski, {S. A.} and Kish, {F. A.} and Caracci, {S. J.} and N. Holonyak and Dallesasse, {J. M.} and Bour, {D. P.} and Treat, {D. W.}",

year = "1992",

doi = "10.1063/1.108452",

language = "English (US)",

volume = "61",

pages = "1688--1690",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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}

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T1 - Native-oxide defined In0.5(AlxGa1-x) 0.5P quantum well heterostructure window lasers (660 nm)

AU - Maranowski, S. A.

AU - Kish, F. A.

AU - Caracci, S. J.

AU - Holonyak, N.

AU - Dallesasse, J. M.

AU - Bour, D. P.

AU - Treat, D. W.

PY - 1992

Y1 - 1992

N2 - Data are presented demonstrating In0.5(AlxGa 1-x)0.5P quantum well heterostructure lasers with extended current-blocking windows (∼75 μm/window) that exhibit significant improvements in output power (∼2×) compared to lasers with no windows. The windows and active stripes are defined by the formation of a thin (∼1000 Å, patterned) native oxide via H2O vapor oxidation (550°C) of the high-gap In0.5(AlxGa 1-x)0.5P upper confining layer. Devices operating at ∼660 nm with a 40 μm wide emitting aperture (∼500 μm cavity) and ∼75 μm windows (total window length ∼150 μm) exhibit 300 K continuous output powers ≳130 mW/facet (uncoated) and pulsed output powers ≳575 mW/facet (uncoated). Improvements in output power result from decreased heating at the facets and defocusing of the optical wave in the unpumped window regions.

AB - Data are presented demonstrating In0.5(AlxGa 1-x)0.5P quantum well heterostructure lasers with extended current-blocking windows (∼75 μm/window) that exhibit significant improvements in output power (∼2×) compared to lasers with no windows. The windows and active stripes are defined by the formation of a thin (∼1000 Å, patterned) native oxide via H2O vapor oxidation (550°C) of the high-gap In0.5(AlxGa 1-x)0.5P upper confining layer. Devices operating at ∼660 nm with a 40 μm wide emitting aperture (∼500 μm cavity) and ∼75 μm windows (total window length ∼150 μm) exhibit 300 K continuous output powers ≳130 mW/facet (uncoated) and pulsed output powers ≳575 mW/facet (uncoated). Improvements in output power result from decreased heating at the facets and defocusing of the optical wave in the unpumped window regions.

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