Native-oxide defined In0.5(AlxGa1-x) 0.5P quantum well heterostructure window lasers (660 nm)

S. A. Maranowski, F. A. Kish, S. J. Caracci, N. Holonyak, J. M. Dallesasse, D. P. Bour, D. W. Treat

Research output: Contribution to journalArticle

Abstract

Data are presented demonstrating In0.5(AlxGa 1-x)0.5P quantum well heterostructure lasers with extended current-blocking windows (∼75 μm/window) that exhibit significant improvements in output power (∼2×) compared to lasers with no windows. The windows and active stripes are defined by the formation of a thin (∼1000 Å, patterned) native oxide via H2O vapor oxidation (550°C) of the high-gap In0.5(AlxGa 1-x)0.5P upper confining layer. Devices operating at ∼660 nm with a 40 μm wide emitting aperture (∼500 μm cavity) and ∼75 μm windows (total window length ∼150 μm) exhibit 300 K continuous output powers ≳130 mW/facet (uncoated) and pulsed output powers ≳575 mW/facet (uncoated). Improvements in output power result from decreased heating at the facets and defocusing of the optical wave in the unpumped window regions.

Original languageEnglish (US)
Pages (from-to)1688-1690
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number14
DOIs
StatePublished - Dec 1 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Maranowski, S. A., Kish, F. A., Caracci, S. J., Holonyak, N., Dallesasse, J. M., Bour, D. P., & Treat, D. W. (1992). Native-oxide defined In0.5(AlxGa1-x) 0.5P quantum well heterostructure window lasers (660 nm). Applied Physics Letters, 61(14), 1688-1690. https://doi.org/10.1063/1.108452