Native-oxide-defined coupled-stripe AlxGa1-xAs-GaAs quantum well heterostructure lasers

J. M. Dallesasse; N. Holonyak; D. C. Hall; N. El-Zein; A. R. Sugg; S. C. Smith; R. D. Burnham

doi:10.1063/1.104504

Native-oxide-defined coupled-stripe Al_xGa_1-xAs-GaAs quantum well heterostructure lasers

J. M. Dallesasse, N. Holonyak, D. C. Hall, N. El-Zein, A. R. Sugg, S. C. Smith, R. D. Burnham

Research output: Contribution to journal › Article › peer-review

Abstract

Data are presented on the continuous-wave (cw) room-temperature (300 K) operation of multiple stripe Al_xGa_1-xAs-GaAs quantum well heterostructure (QWH) laser arrays defined with native oxide contact masking. Use of the native Al_xGa_1-xAs(x≳0.7) oxide allows the fabrication of high-performance devices without depositing foreign oxide or dielectric layers (SiO₂ or Si₃N₄). Arrays of ten 5-μm-wide emitters on 7 μm centers are coupled and operate at powers as high as 300 mW per facet, or at wider stripe spacing (5 μm emitters on 10 μm centers) as high as 400 mW per facet. These data indicate that current blocking layers of native oxide, formed from Al_xGa_1- _xAs with H₂O vapor in N₂ carrier gas (400°C, 3 h), can be used in the construction of high-power multiple stripe QWH arrays with excellent performance characteristics.

Original language	English (US)
Pages (from-to)	834-836
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	8
DOIs	https://doi.org/10.1063/1.104504
State	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Native-oxide-defined coupled-stripe AlxGa1-xAs-GaAs quantum well heterostructure lasers",

abstract = "Data are presented on the continuous-wave (cw) room-temperature (300 K) operation of multiple stripe AlxGa1-xAs-GaAs quantum well heterostructure (QWH) laser arrays defined with native oxide contact masking. Use of the native AlxGa1-xAs(x≳0.7) oxide allows the fabrication of high-performance devices without depositing foreign oxide or dielectric layers (SiO2 or Si3N4). Arrays of ten 5-μm-wide emitters on 7 μm centers are coupled and operate at powers as high as 300 mW per facet, or at wider stripe spacing (5 μm emitters on 10 μm centers) as high as 400 mW per facet. These data indicate that current blocking layers of native oxide, formed from AlxGa1- xAs with H2O vapor in N2 carrier gas (400°C, 3 h), can be used in the construction of high-power multiple stripe QWH arrays with excellent performance characteristics.",

author = "Dallesasse, {J. M.} and N. Holonyak and Hall, {D. C.} and N. El-Zein and Sugg, {A. R.} and Smith, {S. C.} and Burnham, {R. D.}",

year = "1991",

doi = "10.1063/1.104504",

language = "English (US)",

volume = "58",

pages = "834--836",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Native-oxide-defined coupled-stripe AlxGa1-xAs-GaAs quantum well heterostructure lasers

AU - Dallesasse, J. M.

AU - Holonyak, N.

AU - Hall, D. C.

AU - El-Zein, N.

AU - Sugg, A. R.

AU - Smith, S. C.

AU - Burnham, R. D.

PY - 1991

Y1 - 1991

N2 - Data are presented on the continuous-wave (cw) room-temperature (300 K) operation of multiple stripe AlxGa1-xAs-GaAs quantum well heterostructure (QWH) laser arrays defined with native oxide contact masking. Use of the native AlxGa1-xAs(x≳0.7) oxide allows the fabrication of high-performance devices without depositing foreign oxide or dielectric layers (SiO2 or Si3N4). Arrays of ten 5-μm-wide emitters on 7 μm centers are coupled and operate at powers as high as 300 mW per facet, or at wider stripe spacing (5 μm emitters on 10 μm centers) as high as 400 mW per facet. These data indicate that current blocking layers of native oxide, formed from AlxGa1- xAs with H2O vapor in N2 carrier gas (400°C, 3 h), can be used in the construction of high-power multiple stripe QWH arrays with excellent performance characteristics.

AB - Data are presented on the continuous-wave (cw) room-temperature (300 K) operation of multiple stripe AlxGa1-xAs-GaAs quantum well heterostructure (QWH) laser arrays defined with native oxide contact masking. Use of the native AlxGa1-xAs(x≳0.7) oxide allows the fabrication of high-performance devices without depositing foreign oxide or dielectric layers (SiO2 or Si3N4). Arrays of ten 5-μm-wide emitters on 7 μm centers are coupled and operate at powers as high as 300 mW per facet, or at wider stripe spacing (5 μm emitters on 10 μm centers) as high as 400 mW per facet. These data indicate that current blocking layers of native oxide, formed from AlxGa1- xAs with H2O vapor in N2 carrier gas (400°C, 3 h), can be used in the construction of high-power multiple stripe QWH arrays with excellent performance characteristics.

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