Native-oxide-defined coupled-stripe AlxGa1-xAs-GaAs quantum well heterostructure lasers

J. M. Dallesasse, N. Holonyak, D. C. Hall, N. El-Zein, A. R. Sugg, S. C. Smith, R. D. Burnham

Research output: Contribution to journalArticlepeer-review

Abstract

Data are presented on the continuous-wave (cw) room-temperature (300 K) operation of multiple stripe AlxGa1-xAs-GaAs quantum well heterostructure (QWH) laser arrays defined with native oxide contact masking. Use of the native AlxGa1-xAs(x≳0.7) oxide allows the fabrication of high-performance devices without depositing foreign oxide or dielectric layers (SiO2 or Si3N4). Arrays of ten 5-μm-wide emitters on 7 μm centers are coupled and operate at powers as high as 300 mW per facet, or at wider stripe spacing (5 μm emitters on 10 μm centers) as high as 400 mW per facet. These data indicate that current blocking layers of native oxide, formed from AlxGa1- xAs with H2O vapor in N2 carrier gas (400°C, 3 h), can be used in the construction of high-power multiple stripe QWH arrays with excellent performance characteristics.

Original languageEnglish (US)
Pages (from-to)834-836
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number8
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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