Native-oxide coupled-stripe AlyGa1-yAs-GaAs-In xGa1-xAs quantum well heterostructure lasers

T. A. Richard; F. A. Kish; N. Holonyak; J. M. Dallesasse; K. C. Hsieh; M. J. Ries; P. Gavrilovic; K. Meehan; J. E. Williams

doi:10.1063/1.104880

Native-oxide coupled-stripe Al_yGa_1-yAs-GaAs-In _xGa_1-xAs quantum well heterostructure lasers

T. A. Richard, F. A. Kish, N. Holonyak, J. M. Dallesasse, K. C. Hsieh, M. J. Ries, P. Gavrilovic, K. Meehan, J. E. Williams

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Abstract

Data are presented on a high-performance native-oxide coupled-stripe Al_yGa_1-yAs-GaAs-In_xGa_1-xAs quantum well heterostructure laser realized by the recently introduced simple process of "wet" oxidation (H₂O vapor+N₂, ≳400°C, 3 h) of the upper Al_yGa_1-yAs confining layer. If the native oxide between active stripes (ten 5 μm stripes on 10 μm centers) is brought into closer proximity with the waveguide and quantum well region (i.e., from 0.53 to 0.4 μm), the 10-stripe laser operates decoupled because of increased (coupling) absorption losses and some index guiding.

Original language	English (US)
Pages (from-to)	2390-2392
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	21
DOIs	https://doi.org/10.1063/1.104880
State	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.104880

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title = "Native-oxide coupled-stripe AlyGa1-yAs-GaAs-In xGa1-xAs quantum well heterostructure lasers",

abstract = "Data are presented on a high-performance native-oxide coupled-stripe AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure laser realized by the recently introduced simple process of {"}wet{"} oxidation (H2O vapor+N2, ≳400°C, 3 h) of the upper AlyGa1-yAs confining layer. If the native oxide between active stripes (ten 5 μm stripes on 10 μm centers) is brought into closer proximity with the waveguide and quantum well region (i.e., from 0.53 to 0.4 μm), the 10-stripe laser operates decoupled because of increased (coupling) absorption losses and some index guiding.",

author = "Richard, {T. A.} and Kish, {F. A.} and N. Holonyak and Dallesasse, {J. M.} and Hsieh, {K. C.} and Ries, {M. J.} and P. Gavrilovic and K. Meehan and Williams, {J. E.}",

year = "1991",

doi = "10.1063/1.104880",

language = "English (US)",

volume = "58",

pages = "2390--2392",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Native-oxide coupled-stripe AlyGa1-yAs-GaAs-In xGa1-xAs quantum well heterostructure lasers

AU - Richard, T. A.

AU - Kish, F. A.

AU - Holonyak, N.

AU - Dallesasse, J. M.

AU - Hsieh, K. C.

AU - Ries, M. J.

AU - Gavrilovic, P.

AU - Meehan, K.

AU - Williams, J. E.

PY - 1991

Y1 - 1991

N2 - Data are presented on a high-performance native-oxide coupled-stripe AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure laser realized by the recently introduced simple process of "wet" oxidation (H2O vapor+N2, ≳400°C, 3 h) of the upper AlyGa1-yAs confining layer. If the native oxide between active stripes (ten 5 μm stripes on 10 μm centers) is brought into closer proximity with the waveguide and quantum well region (i.e., from 0.53 to 0.4 μm), the 10-stripe laser operates decoupled because of increased (coupling) absorption losses and some index guiding.

AB - Data are presented on a high-performance native-oxide coupled-stripe AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure laser realized by the recently introduced simple process of "wet" oxidation (H2O vapor+N2, ≳400°C, 3 h) of the upper AlyGa1-yAs confining layer. If the native oxide between active stripes (ten 5 μm stripes on 10 μm centers) is brought into closer proximity with the waveguide and quantum well region (i.e., from 0.53 to 0.4 μm), the 10-stripe laser operates decoupled because of increased (coupling) absorption losses and some index guiding.

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