Native-oxide coupled-stripe AlyGa1-yAs-GaAs-In xGa1-xAs quantum well heterostructure lasers

T. A. Richard, F. A. Kish, N. Holonyak, J. M. Dallesasse, K. C. Hsieh, M. J. Ries, P. Gavrilovic, K. Meehan, J. E. Williams

Research output: Contribution to journalArticlepeer-review


Data are presented on a high-performance native-oxide coupled-stripe AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure laser realized by the recently introduced simple process of "wet" oxidation (H2O vapor+N2, ≳400°C, 3 h) of the upper AlyGa1-yAs confining layer. If the native oxide between active stripes (ten 5 μm stripes on 10 μm centers) is brought into closer proximity with the waveguide and quantum well region (i.e., from 0.53 to 0.4 μm), the 10-stripe laser operates decoupled because of increased (coupling) absorption losses and some index guiding.

Original languageEnglish (US)
Pages (from-to)2390-2392
Number of pages3
JournalApplied Physics Letters
Issue number21
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Native-oxide coupled-stripe AlyGa1-yAs-GaAs-In xGa1-xAs quantum well heterostructure lasers'. Together they form a unique fingerprint.

Cite this