Abstract
Data are presented demonstrating AlxGa1-xAs-GaAs quantum well heterostructure laser diodes consisting of an array of coupled cavities (19 μm long on 22 μm centers, ∼250 μm total length) arranged lengthwise in single 10-μm-wide laser stripes. The cavities are defined by a native oxide formed from a significant portion of the high-gap AlxGa1-xAs upper confining layer. The native oxide (grown at 425 °C in H2O vapor+N2 carrier gas) confines the injected carriers and optical field within the cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe. These diodes exhibit single-longitudinal-mode operation over an extended range (relative to similar diodes fabricated without multiple cavities). At high current injection levels, longitudinal-mode spectra demonstrate unambiguously oscillation from the internal coupled cavities.
Original language | English (US) |
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Pages (from-to) | 2838-2840 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 59 |
Issue number | 22 |
DOIs | |
State | Published - 1991 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)