Native-oxide coupled-cavity AlxGa1-xAs-GaAs quantum well heterostructure laser diodes

N. El-Zein, F. A. Kish, N. Holonyak, A. R. Sugg, M. J. Ries, S. C. Smith, J. M. Dallesasse, R. D. Burnham

Research output: Contribution to journalArticlepeer-review

Abstract

Data are presented demonstrating AlxGa1-xAs-GaAs quantum well heterostructure laser diodes consisting of an array of coupled cavities (19 μm long on 22 μm centers, ∼250 μm total length) arranged lengthwise in single 10-μm-wide laser stripes. The cavities are defined by a native oxide formed from a significant portion of the high-gap AlxGa1-xAs upper confining layer. The native oxide (grown at 425 °C in H2O vapor+N2 carrier gas) confines the injected carriers and optical field within the cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe. These diodes exhibit single-longitudinal-mode operation over an extended range (relative to similar diodes fabricated without multiple cavities). At high current injection levels, longitudinal-mode spectra demonstrate unambiguously oscillation from the internal coupled cavities.

Original languageEnglish (US)
Pages (from-to)2838-2840
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number22
DOIs
StatePublished - 1991
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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