Data are presented demonstrating AlxGa1-xAs-GaAs quantum well heterostructure laser diodes consisting of an array of coupled cavities (19 μm long on 22 μm centers, ∼250 μm total length) arranged lengthwise in single 10-μm-wide laser stripes. The cavities are defined by a native oxide formed from a significant portion of the high-gap AlxGa1-xAs upper confining layer. The native oxide (grown at 425 °C in H2O vapor+N2 carrier gas) confines the injected carriers and optical field within the cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe. These diodes exhibit single-longitudinal-mode operation over an extended range (relative to similar diodes fabricated without multiple cavities). At high current injection levels, longitudinal-mode spectra demonstrate unambiguously oscillation from the internal coupled cavities.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1991|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)