Nanowatt-level wakeup receiver front ends using MEMS resonators for impedance transformation

Pouyan Bassirian, Jesse Moody, Ruochen Lu, Anming Gao, Tomas Manzaneque, Abhishek Roy, N. Scott Barker, Benton H. Calhoun, Songbin Gong, Steven M. Bowers

Research output: Contribution to journalArticle

Abstract

This paper presents the first demonstration of nanowatt-level CMOS wakeup receiver (WuRx) front ends (FEs) that utilize microelectromechanical system (MEMS)-based matching networks (MNs). The first FE uses a fully MEMS-based MN (MMN) that operates at 88.8 MHz. It consists of a large array of lithium niobate resonators that are fabricated on the same die. Measurements of the integrated WuRx FE with the MMN indicate that its loaded voltage gain achieves a bandwidth of 0.78 MHz with a quality factor of 114. The second FE uses a hybrid MN (HMN) that operates at 457 MHz. It consists of an aluminum nitride laterally vibrating resonator as well as eight discrete inductors and capacitors surrounding the MEMS device. Measurements of the integrated WuRx FE with the HMN indicate that it achieves a sensitivity of-54 dBm with 7 nW of average dc power consumption without a digital correlator.

Original languageEnglish (US)
Article number8640843
Pages (from-to)1615-1627
Number of pages13
JournalIEEE Transactions on Microwave Theory and Techniques
Volume67
Issue number4
DOIs
StatePublished - Apr 2019

Keywords

  • CMOS ICs
  • impedance matching
  • low power RFIC design
  • microelectromechanical systems (MEMSs)
  • sensor networks

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Bassirian, P., Moody, J., Lu, R., Gao, A., Manzaneque, T., Roy, A., Scott Barker, N., Calhoun, B. H., Gong, S., & Bowers, S. M. (2019). Nanowatt-level wakeup receiver front ends using MEMS resonators for impedance transformation. IEEE Transactions on Microwave Theory and Techniques, 67(4), 1615-1627. [8640843]. https://doi.org/10.1109/TMTT.2019.2894645