Abstract
This paper presents the first demonstration of nanowatt-level CMOS wakeup receiver (WuRx) front ends (FEs) that utilize microelectromechanical system (MEMS)-based matching networks (MNs). The first FE uses a fully MEMS-based MN (MMN) that operates at 88.8 MHz. It consists of a large array of lithium niobate resonators that are fabricated on the same die. Measurements of the integrated WuRx FE with the MMN indicate that its loaded voltage gain achieves a bandwidth of 0.78 MHz with a quality factor of 114. The second FE uses a hybrid MN (HMN) that operates at 457 MHz. It consists of an aluminum nitride laterally vibrating resonator as well as eight discrete inductors and capacitors surrounding the MEMS device. Measurements of the integrated WuRx FE with the HMN indicate that it achieves a sensitivity of-54 dBm with 7 nW of average dc power consumption without a digital correlator.
| Original language | English (US) |
|---|---|
| Article number | 8640843 |
| Pages (from-to) | 1615-1627 |
| Number of pages | 13 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 67 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 2019 |
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Keywords
- CMOS ICs
- impedance matching
- low power RFIC design
- microelectromechanical systems (MEMSs)
- sensor networks
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Nanowatt-level wakeup receiver front ends using MEMS resonators for impedance transformation. / Bassirian, Pouyan; Moody, Jesse; Lu, Ruochen; Gao, Anming; Manzaneque, Tomas; Roy, Abhishek; Scott Barker, N.; Calhoun, Benton H.; Gong, Songbin; Bowers, Steven M.
In: IEEE Transactions on Microwave Theory and Techniques, Vol. 67, No. 4, 8640843, 04.2019, p. 1615-1627.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nanowatt-level wakeup receiver front ends using MEMS resonators for impedance transformation
AU - Bassirian, Pouyan
AU - Moody, Jesse
AU - Lu, Ruochen
AU - Gao, Anming
AU - Manzaneque, Tomas
AU - Roy, Abhishek
AU - Scott Barker, N.
AU - Calhoun, Benton H.
AU - Gong, Songbin
AU - Bowers, Steven M.
PY - 2019/4
Y1 - 2019/4
N2 - This paper presents the first demonstration of nanowatt-level CMOS wakeup receiver (WuRx) front ends (FEs) that utilize microelectromechanical system (MEMS)-based matching networks (MNs). The first FE uses a fully MEMS-based MN (MMN) that operates at 88.8 MHz. It consists of a large array of lithium niobate resonators that are fabricated on the same die. Measurements of the integrated WuRx FE with the MMN indicate that its loaded voltage gain achieves a bandwidth of 0.78 MHz with a quality factor of 114. The second FE uses a hybrid MN (HMN) that operates at 457 MHz. It consists of an aluminum nitride laterally vibrating resonator as well as eight discrete inductors and capacitors surrounding the MEMS device. Measurements of the integrated WuRx FE with the HMN indicate that it achieves a sensitivity of-54 dBm with 7 nW of average dc power consumption without a digital correlator.
AB - This paper presents the first demonstration of nanowatt-level CMOS wakeup receiver (WuRx) front ends (FEs) that utilize microelectromechanical system (MEMS)-based matching networks (MNs). The first FE uses a fully MEMS-based MN (MMN) that operates at 88.8 MHz. It consists of a large array of lithium niobate resonators that are fabricated on the same die. Measurements of the integrated WuRx FE with the MMN indicate that its loaded voltage gain achieves a bandwidth of 0.78 MHz with a quality factor of 114. The second FE uses a hybrid MN (HMN) that operates at 457 MHz. It consists of an aluminum nitride laterally vibrating resonator as well as eight discrete inductors and capacitors surrounding the MEMS device. Measurements of the integrated WuRx FE with the HMN indicate that it achieves a sensitivity of-54 dBm with 7 nW of average dc power consumption without a digital correlator.
KW - CMOS ICs
KW - impedance matching
KW - low power RFIC design
KW - microelectromechanical systems (MEMSs)
KW - sensor networks
UR - http://www.scopus.com/inward/record.url?scp=85064082788&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85064082788&partnerID=8YFLogxK
U2 - 10.1109/TMTT.2019.2894645
DO - 10.1109/TMTT.2019.2894645
M3 - Article
AN - SCOPUS:85064082788
VL - 67
SP - 1615
EP - 1627
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
SN - 0018-9480
IS - 4
M1 - 8640843
ER -