Nanowatt-level wakeup receiver front ends using MEMS resonators for impedance transformation

Pouyan Bassirian; Jesse Moody; Ruochen Lu; Anming Gao; Tomas Manzaneque; Abhishek Roy; N. Scott Barker; Benton H. Calhoun; Songbin Gong; Steven M. Bowers

doi:10.1109/TMTT.2019.2894645

Nanowatt-level wakeup receiver front ends using MEMS resonators for impedance transformation

Pouyan Bassirian, Jesse Moody, Ruochen Lu, Anming Gao, Tomas Manzaneque, Abhishek Roy, N. Scott Barker, Benton H. Calhoun, Songbin Gong, Steven M. Bowers

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents the first demonstration of nanowatt-level CMOS wakeup receiver (WuRx) front ends (FEs) that utilize microelectromechanical system (MEMS)-based matching networks (MNs). The first FE uses a fully MEMS-based MN (MMN) that operates at 88.8 MHz. It consists of a large array of lithium niobate resonators that are fabricated on the same die. Measurements of the integrated WuRx FE with the MMN indicate that its loaded voltage gain achieves a bandwidth of 0.78 MHz with a quality factor of 114. The second FE uses a hybrid MN (HMN) that operates at 457 MHz. It consists of an aluminum nitride laterally vibrating resonator as well as eight discrete inductors and capacitors surrounding the MEMS device. Measurements of the integrated WuRx FE with the HMN indicate that it achieves a sensitivity of-54 dBm with 7 nW of average dc power consumption without a digital correlator.

Original language	English (US)
Article number	8640843
Pages (from-to)	1615-1627
Number of pages	13
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	67
Issue number	4
DOIs	https://doi.org/10.1109/TMTT.2019.2894645
State	Published - Apr 2019

Keywords

CMOS ICs
impedance matching
low power RFIC design
microelectromechanical systems (MEMSs)
sensor networks

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1109/TMTT.2019.2894645

Library availability

Discover UIUC Full Text

Cite this

@article{fe7bc05627c34327af86c1c9d57513af,

title = "Nanowatt-level wakeup receiver front ends using MEMS resonators for impedance transformation",

abstract = "This paper presents the first demonstration of nanowatt-level CMOS wakeup receiver (WuRx) front ends (FEs) that utilize microelectromechanical system (MEMS)-based matching networks (MNs). The first FE uses a fully MEMS-based MN (MMN) that operates at 88.8 MHz. It consists of a large array of lithium niobate resonators that are fabricated on the same die. Measurements of the integrated WuRx FE with the MMN indicate that its loaded voltage gain achieves a bandwidth of 0.78 MHz with a quality factor of 114. The second FE uses a hybrid MN (HMN) that operates at 457 MHz. It consists of an aluminum nitride laterally vibrating resonator as well as eight discrete inductors and capacitors surrounding the MEMS device. Measurements of the integrated WuRx FE with the HMN indicate that it achieves a sensitivity of-54 dBm with 7 nW of average dc power consumption without a digital correlator.",

keywords = "CMOS ICs, impedance matching, low power RFIC design, microelectromechanical systems (MEMSs), sensor networks",

author = "Pouyan Bassirian and Jesse Moody and Ruochen Lu and Anming Gao and Tomas Manzaneque and Abhishek Roy and {Scott Barker}, N. and Calhoun, {Benton H.} and Songbin Gong and Bowers, {Steven M.}",

note = "Manuscript received September 14, 2018; revised November 20, 2018; accepted December 23, 2018. Date of publication February 12, 2019; date of current version April 3, 2019. This work was supported by the DARPA N-Zero Program under Contract HR0011-15-C-0139. (Corresponding author: Pouyan Bassirian.) P. Bassirian, J. Moody, A. Roy, N. S. Barker, B. H. Calhoun, and S. M. Bowers are with the Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904 USA (e-mail: [email protected]). The authors would like to thank Prof. T. Olsson from the University of Pennsylvania, Philadelphia, PA, USA (formerly with DARPA) for funding support through the DARPA N-Zero Program. The views expressed are those of the authors and do not reflect the official policy or position of the Department of Defense or the U.S. Government.",

year = "2019",

month = apr,

doi = "10.1109/TMTT.2019.2894645",

language = "English (US)",

volume = "67",

pages = "1615--1627",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Nanowatt-level wakeup receiver front ends using MEMS resonators for impedance transformation

AU - Bassirian, Pouyan

AU - Moody, Jesse

AU - Lu, Ruochen

AU - Gao, Anming

AU - Manzaneque, Tomas

AU - Roy, Abhishek

AU - Scott Barker, N.

AU - Calhoun, Benton H.

AU - Gong, Songbin

AU - Bowers, Steven M.

N1 - Manuscript received September 14, 2018; revised November 20, 2018; accepted December 23, 2018. Date of publication February 12, 2019; date of current version April 3, 2019. This work was supported by the DARPA N-Zero Program under Contract HR0011-15-C-0139. (Corresponding author: Pouyan Bassirian.) P. Bassirian, J. Moody, A. Roy, N. S. Barker, B. H. Calhoun, and S. M. Bowers are with the Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904 USA (e-mail: [email protected]). The authors would like to thank Prof. T. Olsson from the University of Pennsylvania, Philadelphia, PA, USA (formerly with DARPA) for funding support through the DARPA N-Zero Program. The views expressed are those of the authors and do not reflect the official policy or position of the Department of Defense or the U.S. Government.

PY - 2019/4

Y1 - 2019/4

N2 - This paper presents the first demonstration of nanowatt-level CMOS wakeup receiver (WuRx) front ends (FEs) that utilize microelectromechanical system (MEMS)-based matching networks (MNs). The first FE uses a fully MEMS-based MN (MMN) that operates at 88.8 MHz. It consists of a large array of lithium niobate resonators that are fabricated on the same die. Measurements of the integrated WuRx FE with the MMN indicate that its loaded voltage gain achieves a bandwidth of 0.78 MHz with a quality factor of 114. The second FE uses a hybrid MN (HMN) that operates at 457 MHz. It consists of an aluminum nitride laterally vibrating resonator as well as eight discrete inductors and capacitors surrounding the MEMS device. Measurements of the integrated WuRx FE with the HMN indicate that it achieves a sensitivity of-54 dBm with 7 nW of average dc power consumption without a digital correlator.

AB - This paper presents the first demonstration of nanowatt-level CMOS wakeup receiver (WuRx) front ends (FEs) that utilize microelectromechanical system (MEMS)-based matching networks (MNs). The first FE uses a fully MEMS-based MN (MMN) that operates at 88.8 MHz. It consists of a large array of lithium niobate resonators that are fabricated on the same die. Measurements of the integrated WuRx FE with the MMN indicate that its loaded voltage gain achieves a bandwidth of 0.78 MHz with a quality factor of 114. The second FE uses a hybrid MN (HMN) that operates at 457 MHz. It consists of an aluminum nitride laterally vibrating resonator as well as eight discrete inductors and capacitors surrounding the MEMS device. Measurements of the integrated WuRx FE with the HMN indicate that it achieves a sensitivity of-54 dBm with 7 nW of average dc power consumption without a digital correlator.

KW - CMOS ICs

KW - impedance matching

KW - low power RFIC design

KW - microelectromechanical systems (MEMSs)

KW - sensor networks

UR - http://www.scopus.com/inward/record.url?scp=85064082788&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85064082788&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2019.2894645

DO - 10.1109/TMTT.2019.2894645

M3 - Article

AN - SCOPUS:85064082788

SN - 0018-9480

VL - 67

SP - 1615

EP - 1627

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 4

M1 - 8640843

ER -

Nanowatt-level wakeup receiver front ends using MEMS resonators for impedance transformation

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this